| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
66,000 pcs
|
66000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMS0310S is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage rating of 30V and can handle a continuous drain current of up to 42A at case temperature 25°C (19A at ambient 25°C).
The device exhibits a low maximum on-resistance of 4mOhm at 18A and 10V gate drive, making it suitable for high-efficiency switching applications. Input capacitance is 2820pF at 15V and total gate charge is 46nC at 10V, enabling fast switching. The gate threshold voltage is 3V maximum at 1mA drain current.
This MOSFET is housed in a surface mount 8-PowerTDFN package (8-PQFN 5x6mm) and operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 46W at case temperature 25°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.34 | $0.34 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
19A at ambient temperature 25°C and 42A at case temperature 25°C.
Maximum 4mOhm at 18A drain current and 10V gate drive.
Surface mount 8-PowerTDFN (8-PQFN 5x6mm).
Junction temperature range is -55°C to 150°C.
The part is listed as RoHS3 Compliant, but this status is unverified (low confidence).