FDMS007N08LC N-Channel MOSFET with 80V drain-source voltage and 84A continuous drain current. Features low on-resistance of 6.7mΩ at 10V Vgs.
Mfr Part #:

FDMS007N08LC

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 80V drain-source voltage and 84A continuous drain current. Features low on-resistance of 6.7mΩ at 10V Vgs.
✓ Total Stock: 61,321 pcs
$ Price Range: $1.03 - $3.41

FDMS007N08LC Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,000 pcs
60000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,321 pcs
1321 pcs On Request 1 On Request On Request On Request On Request On Request

FDMS007N08LC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS007N08LC Description

Short technical summary and product information.

The FDMS007N08LC is an N-Channel MOSFET produced using onsemi's advanced POWERTRENCH process with Shielded Gate technology. It is designed to minimize on-state resistance while maintaining superior switching performance with a soft body diode.

 

Key specifications include a maximum drain-source voltage of 80V, continuous drain current of 84A at Tc=25°C (14A at Ta=25°C), and a pulsed drain current of 345A. The maximum on-resistance is 6.7mΩ at Vgs=10V, Id=21A and 9.9mΩ at Vgs=4.5V, Id=17A. Gate charge is 46nC at Vgs=10V, and input capacitance is 3100pF at Vds=40V.

 

The device is housed in a surface-mount 8-PowerTDFN package (8-PQFN 5x6mm) with a 1.27mm lead pitch. It is rated for operation from -55°C to 150°C junction temperature and has a maximum power dissipation of 92.6W at Tc=25°C. The MOSFET is 100% UIL tested and offers a single pulse avalanche energy rating of 181.5mJ.

 

Typical applications include primary DC-DC converters, synchronous rectifiers in DC-DC and AC-DC converters, motor drives, and solar power systems.

FDMS007N08LC Quick Information

Product Type: MOSFET - N-Channel
Canonical Name: N-Channel MOSFET 80V 84A 6.7mOhm
Subcategory: N-Channel MOSFET

FDMS007N08LC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDMS007N08LC Estimated Pricing

Qty Low High
1+ $3.41 $3.41
10+ $2.02 $2.02
100+ $1.50 $1.50
500+ $1.28 $1.28
1,000+ $1.20 $1.20
3,000+ $1.11 $1.11
6,000+ $1.03 $1.03

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS007N08LC Features

  • 80V maximum drain-source voltage.
  • 84A continuous drain current at 25°C.
  • Low on-resistance of 6.7mΩ at 10V gate drive.
  • Shielded Gate technology for low EMI.
  • 100% UIL tested avalanche energy.

FDMS007N08LC Applications

  • Used in DC-DC converters as primary MOSFET.
  • Synchronous rectifier in DC-DC and AC-DC circuits.
  • Motor drive applications.
  • Solar power systems.

FDMS007N08LC FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMS007N08LC?

80V.

What is the continuous drain current rating?

84A at Tc=25°C and 14A at Ta=25°C.

What is the typical on-resistance?

Maximum 6.7mΩ at Vgs=10V, Id=21A and 9.9mΩ at Vgs=4.5V, Id=17A.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the package type?

8-PowerTDFN (8-PQFN 5x6mm) surface mount package.

Is the device RoHS compliant?

Yes, RoHS3 compliant and Pb-Free.

What is the gate charge?

Maximum 46nC at Vgs=10V.

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