FDMS003N08C FDMS003N08C is an N-Channel Power MOSFET from ON Semiconductor. It features a drain-source voltage of 80V, continuous drain current of 22A at ambient temperature (147A at case), and low on-resistance of 3.1mOhm.
Mfr Part #:

FDMS003N08C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMS003N08C is an N-Channel Power MOSFET from ON Semiconductor. It features a drain-source voltage of 80V, continuous drain current of 22A at ambient temperature (147A at case), and low on-resistance of 3.1mOhm.
✓ Total Stock: 109 pcs
$ Price Range: $4.42 - $8.94

FDMS003N08C Available from 1 distributor

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FDMS003N08C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMS003N08C Description

Short technical summary and product information.

FDMS003N08C is an N-Channel power MOSFET manufactured by ON Semiconductor (onsemi). It is housed in a surface-mount 8-PowerTDFN package, also known as Power56, which is designed for efficient thermal management.

 

Key electrical specifications include a drain-source voltage rating of 80V, continuous drain current of 22A at ambient temperature (25°C) and 147A at case temperature (25°C). The maximum on-resistance is 3.1mOhm at a drain current of 56A and gate-source voltage of 10V. The gate threshold voltage is 4V maximum at 310µA drain current. The device features a gate charge of 73nC and input capacitance of 5350pF at 40V drain-source.

 

Thermal characteristics include a maximum power dissipation of 2.7W at ambient temperature and 125W at case temperature, with an operating junction temperature range of -55°C to 150°C. The device is surface-mountable and requires a gate drive voltage of 10V for minimum on-resistance.

 

The low on-resistance and high current capability make this MOSFET suitable for power management applications such as DC-DC converters, motor control, and high-efficiency power switching.

FDMS003N08C Quick Information

Product Type: Power MOSFET
Canonical Name: FDMS003N08C N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FDMS003N08C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDMS003N08C Estimated Pricing

Qty Low High
1+ $8.94 $8.94
10+ $6.10 $6.10
100+ $4.49 $4.49
500+ $4.45 $4.45
1,000+ $4.42 $4.42
3,000+ $4.42 $4.42

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMS003N08C Features

  • N-channel power MOSFET with 80V drain-source voltage.
  • Continuous drain current of 22A at ambient temperature.
  • Low on-resistance of 3.1mOhm at 56A and 10V gate drive.
  • Surface-mount Power56 (8-PowerTDFN) package.
  • RoHS3 compliant and MSL level 1.

FDMS003N08C Applications

  • Suitable for high-efficiency DC-DC converters.
  • Used in motor control and power management.
  • Ideal for applications requiring low on-resistance.

FDMS003N08C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMS003N08C?

80V.

What package is the FDMS003N08C available in?

8-PowerTDFN (Power56) surface-mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the FDMS003N08C RoHS compliant?

Yes, it is listed as RoHS3 compliant, though unverified.

What is the gate threshold voltage of the FDMS003N08C?

Maximum 4V at 310µA drain current.

What is the typical on-resistance of the FDMS003N08C?

Maximum 3.1mOhm at 56A drain current and 10V gate-source voltage.

What is the continuous drain current rating?

22A at ambient temperature (25°C) and 147A at case temperature (25°C).

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