| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
26,000 pcs
|
26000 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
24,107 pcs
|
24107 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
848 pcs
|
848 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMQ8203 is a quad MOSFET array from On Semiconductor that integrates two N-channel and two P-channel MOSFETs in a single package, configured as a half bridge. This device is designed for high-efficiency bridge rectifier applications, offering significant improvement in power dissipation compared to traditional diode bridges.
Key specifications include a drain-to-source voltage of 100V for the N-channel and -80V for the P-channel. Continuous drain current is rated at 3.4A for N-channel and -2.6A for P-channel at TA=25°C. The on-resistance is 110mΩ maximum at VGS=10V and ID=3A for N-channel, and 190mΩ maximum at VGS=-10V and ID=-2.3A for P-channel. The device features a logic level gate and has a gate charge of 5nC at VGS=10V.
The FDMQ8203 is housed in a 12-WDFN exposed pad package (12-MLP, 5x4.5mm) with a 0.8mm pitch, designed for surface mount assembly. It operates over a temperature range of -55°C to 150°C. The device is Pb-free, Halide-free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.79 | $2.79 |
| 10+ | $1.79 | $1.79 |
| 100+ | $1.22 | $1.22 |
| 500+ | $1.04 | $1.04 |
| 1,000+ | $0.92 | $0.92 |
| 3,000+ | $0.87 | $0.87 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel MOSFETs are rated for 100V drain-to-source voltage, and the P-channel MOSFETs are rated for -80V, as specified in the datasheet.
The FDMQ8203 is available in a 12-WDFN exposed pad package, also referred to as 12-MLP (5x4.5mm), with a 0.8mm pitch for surface mount assembly.
The operating junction temperature range is -55°C to 150°C.
Yes, the FDMQ8203 is RoHS3 compliant and is also Pb-free and halide-free.
The continuous drain current at TA=25°C is 3.4A for the N-channel MOSFETs and -2.6A for the P-channel MOSFETs.
The maximum on-resistance for the N-channel MOSFET is 110mΩ at VGS=10V and ID=3A, and 175mΩ at VGS=6V and ID=2.4A.
The maximum total gate charge is 5nC at VGS=10V.