| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,071 pcs
|
16071 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDML7610S is a dual N-Channel MOSFET from ON Semiconductor, designed for efficient power switching applications. It features a maximum drain-source voltage of 30V and continuous drain current of 12A per channel (17A pulsed). The device offers a low drain-source on-resistance of 7.5 mOhm at 12A and 10V gate drive, minimizing conduction losses.
With a gate charge of 28 nC and input capacitance of 1750 pF, the FDML7610S is suitable for high-frequency switching. The logic level gate threshold (maximum 3V) allows direct drive from low-voltage logic. Operating temperature range is -55°C to 150°C.
The MOSFET is housed in an 8-PowerWDFN surface mount package (8-MLP 3x4.5mm), providing compact footprint for space-constrained designs. The dual configuration integrates two N-channel MOSFETs in a single package, saving board space and simplifying layout.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.39 | $2.39 |
| 10+ | $1.52 | $1.52 |
| 100+ | $1.03 | $1.03 |
| 500+ | $0.83 | $0.83 |
| 1,000+ | $0.74 | $0.74 |
| 3,000+ | $0.59 | $0.59 |
| 6,000+ | $0.58 | $0.58 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerWDFN surface mount package (8-MLP 3x4.5mm).
-55°C to 150°C (junction).
RoHS3 Compliant (unverified).
12A per channel.
7.5 mOhm maximum at 12A, Vgs=10V.
28 nC at Vgs=10V.