| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,348 pcs
|
6348 pcs | On Request | 1 | On Request | On Request | 1707+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDME910PZT is a P-Channel MOSFET from On Semiconductor designed for battery charging and load switching in portable electronics. It offers a drain-source voltage of -20V and continuous drain current of -8A at 25°C. The device features low on-resistance: 24mΩ maximum at Vgs = -4.5V, 31mΩ at Vgs = -2.5V, and 45mΩ at Vgs = -1.8V.
The MOSFET is housed in a 6-PowerUFDFN package (MicroFet 1.6x1.6 Thin) with a maximum height of 0.55mm, making it suitable for space-constrained applications. It supports surface mount assembly and is supplied in tape and reel packaging (5000 units).
The part is RoHS3 compliant, Pb-Free, and free from halogenated compounds and antimony oxides. It operates over a junction temperature range of -55°C to 150°C and includes ESD protection exceeding 2kV HBM.
The drain-source voltage rating is -20V.
The device is available in a 6-PowerUFDFN package, also known as MicroFET 1.6x1.6 Thin.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free.
The continuous drain current is -8A at Ta=25°C.
The maximum Rds(on) is 24mOhm at Vgs=-4.5V and Id=-8A.
The maximum gate threshold voltage is 1.5V at Id=250µA.