FDME820NZT N-Channel MOSFET with 20V drain-source voltage rating and 9A continuous drain current. Offers low on-resistance of 18mΩ at 4.5V gate drive.
Mfr Part #:

FDME820NZT

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 20V drain-source voltage rating and 9A continuous drain current. Offers low on-resistance of 18mΩ at 4.5V gate drive.
✓ Total Stock: 216,998 pcs
$ Price Range: $0.34 - $1.40

FDME820NZT Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
199,715 pcs
199715 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
16,855 pcs
16855 pcs On Request 1 On Request On Request 1327+ On Request On Request
Non-Authorised Inventory information
428 pcs
428 pcs On Request 1 On Request On Request 1347 On Request On Request

FDME820NZT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDME820NZT Description

Short technical summary and product information.

The FDME820NZT is a single N-Channel MOSFET from On Semiconductor, designed using advanced PowerTrench technology for low-voltage applications. It features a maximum drain-source voltage of 20V and continuous drain current of 9A at 25°C ambient temperature. The device offers low on-resistance values: 18mΩ maximum at Vgs=4.5V/Id=9A, 24mΩ at Vgs=2.5V/Id=7.5A, and 32mΩ at Vgs=1.8V/Id=7A, enabling efficient power management.

 

Electrical characteristics include a gate threshold voltage range of 0.5V to 1V at 250µA, maximum gate charge of 8.5nC at Vgs=4.5V, and input capacitance of 865pF at Vds=10V. The operating junction temperature range is -55°C to +150°C, with power dissipation of 2.1W (Note 1a) and 0.7W (Note 1b). Thermal resistance from junction to ambient is 70°C/W and 190°C/W under different mounting conditions.

 

The FDME820NZT is housed in a 6-PowerUFDFN package (MicroFET 1.6x1.6 Thin) for surface mount assembly. It is RoHS3 compliant, halogen-free, and lead-free (Pb-Free). Typical applications include Li-ion battery pack protection, baseband switching, load switching, and DC-DC conversion circuits.

FDME820NZT Quick Information

Product Type: MOSFET (Metal Oxide)
Series: PowerTrench
Canonical Name: FDME820NZT - N-Channel MOSFET, 20V, 9A, 18mΩ, MicroFET 1.6x1.6 Thin
Subcategory: Single MOSFET

FDME820NZT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDME820NZT Estimated Pricing

Qty Low High
1+ $1.40 $1.40
10+ $0.88 $0.88
100+ $0.58 $0.58
500+ $0.46 $0.46
1,000+ $0.38 $0.38
2,500+ $0.38 $0.38
5,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDME820NZT Features

  • N-Channel PowerTrench MOSFET technology.
  • Low on-resistance of 18mΩ at 4.5V gate drive.
  • Designed for low voltage battery and load switching.
  • HBM ESD protection > 2.5 kV.
  • Halogen-free and Pb-free package.

FDME820NZT Applications

  • Ideal for Li-ion battery pack protection.
  • Used in baseband switching circuits.
  • Suitable for load switch applications.
  • DC-DC conversion applications.

FDME820NZT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDME820NZT?

20 V maximum.

What is the continuous drain current?

9 A at 25°C ambient temperature.

What is the on-resistance at 4.5V gate drive?

18 mΩ maximum at 9 A drain current.

What is the operating temperature range?

-55°C to +150°C junction temperature.

Is the FDME820NZT RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the package type?

6-PowerUFDFN (MicroFET 1.6x1.6 Thin) surface mount.

What is the gate threshold voltage?

0.5 V minimum, 1 V maximum at 250 µA drain current.

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