FDME410NZT N-Channel MOSFET, 20V drain-source voltage, 7A continuous drain current. Surface mount package in 6-PowerUFDFN (MicroFet 1.6x1.6 Thin).
Mfr Part #:

FDME410NZT

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 20V drain-source voltage, 7A continuous drain current. Surface mount package in 6-PowerUFDFN (MicroFet 1.6x1.6 Thin).
✓ Total Stock: 9,477 pcs
$ Price Range: $0.26 - $0.28

FDME410NZT Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,477 pcs
4477 pcs On Request 1 On Request On Request On Request On Request On Request

FDME410NZT Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDME410NZT Description

Short technical summary and product information.

The FDME410NZT is an N-Channel MOSFET from ON Semiconductor designed for low-voltage power switching applications. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7A. The device offers a low maximum on-resistance (Rds(on)) of 26mOhm at Vgs=4.5V and Id=7A, enabling efficient power handling. The gate charge (Qg) is 13nC maximum at Vgs=4.5V, and the input capacitance (Ciss) is 1025pF at Vds=10V, supporting fast switching. The threshold voltage (Vgs(th)) is 1V maximum at Id=250µA, and the recommended drive voltages are 1.5V and 4.5V. Maximum power dissipation is 2.1W at ambient temperature. The device is housed in a compact 6-PowerUFDFN surface mount package (MicroFet 1.6x1.6 Thin) and operates over a junction temperature range of -55°C to 150°C. It is listed as RoHS3 compliant and REACH unaffected, though these compliance claims are unverified.

FDME410NZT Quick Information

Product Type: Single MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 20V Vds, 7A Id, MicroFet 1.6x1.6 Thin
Subcategory: N-Channel MOSFET

FDME410NZT Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FDME410NZT Estimated Pricing

Qty Low High
5,000+ $0.28 $0.28
10,000+ $0.26 $0.26
15,000+ $0.26 $0.26

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDME410NZT Features

  • N-Channel MOSFET with 20V drain-source voltage.
  • Low on-resistance of 26mOhm at 4.5V.
  • Low gate charge of 13nC for efficient switching.
  • Surface mount MicroFet 1.6x1.6 Thin package.
  • Operating temperature range -55°C to 150°C.

FDME410NZT Applications

  • Power management in portable electronics.
  • Battery protection circuits.
  • Load switching in handheld devices.
  • DC-DC converter applications.
  • Low-voltage motor control.

FDME410NZT FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDME410NZT?

20V.

What is the continuous drain current?

7A.

What is the on-resistance (Rds(on))?

26mOhm maximum at Id=7A, Vgs=4.5V.

What is the gate charge (Qg)?

13nC maximum at Vgs=4.5V.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is the FDME410NZT available in?

6-PowerUFDFN (MicroFet 1.6x1.6 Thin).

Is the FDME410NZT RoHS compliant?

Listed as RoHS3 Compliant, but this is unverified.

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