| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,259 pcs
|
1259 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDME1034CZT from onsemi is a complementary N and P-Channel MOSFET array designed for DC-DC conversion and load switch applications in portable electronics. It integrates independent N-Channel and P-Channel MOSFETs with low on-state resistance to minimize conduction losses.
Key electrical specifications include a drain-source voltage of 20V for the N-Channel and -20V for the P-Channel, continuous drain current of 3.8A (N-Ch) and 2.6A (P-Ch), and maximum Rds(on) of 66 mΩ at Vgs=4.5V for the N-Channel and 142 mΩ at Vgs=-4.5V for the P-Channel. The device supports logic-level gate drive and features low gate charge (4.2 nC) and input capacitance (300 pF) for efficient high-frequency switching.
The FDME1034CZT is housed in a compact 6-UFDFN exposed pad package (MicroFET 1.6x1.6) with a low profile of 0.55 mm, making it suitable for space-constrained designs. It is surface-mountable, Pb-free, RoHS compliant, and free from halogenated compounds and antimony oxides. The device also includes HBM ESD protection above 1600V.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.21 | $1.21 |
| 10+ | $0.75 | $0.75 |
| 100+ | $0.54 | $0.54 |
| 500+ | $0.43 | $0.43 |
| 1,000+ | $0.39 | $0.39 |
| 2,500+ | $0.34 | $0.34 |
| 5,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-Channel MOSFET has a maximum drain-source voltage of 20 V, and the P-Channel MOSFET has a maximum of -20 V.
The N-Channel MOSFET can handle 3.8 A continuous drain current, and the P-Channel MOSFET can handle 2.6 A (at TA = 25°C).
The N-Channel MOSFET has a maximum Rds(on) of 66 mΩ at Vgs = 4.5 V, and the P-Channel MOSFET has a maximum of 142 mΩ at Vgs = -4.5 V.
The FDME1034CZT is available in a 6-UFDFN Exposed Pad package, also known as MicroFET 1.6x1.6, with a 0.5 mm lead pitch.
The FDME1034CZT can operate over a junction temperature range of -55°C to 150°C.
Yes, the FDME1034CZT is RoHS3 compliant and Pb-free, as stated in the datasheet.
The maximum gate charge (Qg) at Vgs = 4.5 V is 4.2 nC.