FDME1024NZT

The FDME1024NZT is a dual N-channel MOSFET designed as a single package solution for dual switching requirements in cellular handsets and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.

Key electrical specifications include a maximum drain-source voltage of 20V, continuous drain current of 3.8A at 25°C (Note 1a), and pulsed drain current of 6A. On-resistance is specified at multiple gate voltages: 66 mOhm at VGS=4.5V, 86 mOhm at VGS=2.5V, 113 mOhm at VGS=1.8V, and 160 mOhm at VGS=1.5V. The gate threshold voltage is 1V maximum at 250µA. Total gate charge is 4.2 nC at VGS=4.5V, and input capacitance is 300 pF at VDS=10V. Power dissipation is 1.4W (Note 1a) and 0.6W (Note 1b) for single operation. The device operates over a junction temperature range of -55°C to 150°C.

The device is housed in a 6-UFDFN exposed pad package (supplier device package 6-MicroFET 1.6x1.6) and is surface mountable. It is RoHS3 compliant, Pb-Free, and Halogen Free. Typical applications include baseband switching and load switching in portable electronics.