Mfr Part #:

FDME0106NZT

FDME0106NZT is a small signal N-Channel MOSFET from On Semiconductor. It features 20V drain-source voltage rating, 9A continuous drain current, and low 18mΩ on-resistance at 4.5V drive.

✓ Total Stock: 5,108 pcs

$ Price Range: $0.11

FDME0106NZT Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	5,108 pcs On Request	5108 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDME0106NZT Description

Short technical summary and product information.

FDME0106NZT is a small signal N-Channel enhancement mode MOSFET manufactured by On Semiconductor. It is designed for low voltage switching applications and features a drain-source voltage rating of 20V and continuous drain current up to 9A.

The device offers low on-resistance of 18mΩ maximum at 4.5V gate drive, making it efficient for power management. Gate threshold voltage is 1V maximum at 250µA, allowing logic-level drive. Input capacitance is 865pF, and total gate charge is 8.5nC, both typical for this class.

Housed in a compact 6-PowerUFDFN surface mount package with MicroFet 1.6x1.6 Thin footprint, it is suitable for space-constrained designs. Operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 700mW at ambient temperature.

It is listed as RoHS3 compliant and REACH unaffected, though these statuses are unverified. The device is suitable for load switching, DC-DC conversion, and battery protection in portable electronics.

FDME0106NZT Quick Information

Product Type: Single N-Channel MOSFET

Canonical Name: FDME0106NZT Small Signal N-Channel MOSFET

Subcategory: Single MOSFET

FDME0106NZT Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FDME0106NZT Estimated Pricing

Qty	Low	High
5,108+	$0.11	$0.11

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDME0106NZT Features

N-Channel MOSFET with 20V drain-source voltage.
Low 18mOhm on-resistance at 4.5V gate drive.
Supports up to 9A continuous drain current.
Surface mount MicroFet 1.6x1.6 Thin package.
Wide operating temperature range -55°C to 150°C.

FDME0106NZT Applications

Ideal for load switching in portable devices.
Suitable for DC-DC converter output stages.
Used in battery protection circuits.
Employed in low-voltage power management.

FDME0106NZT FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDME0106NZT?

20V

What package is the FDME0106NZT available in?

6-PowerUFDFN surface mount package with MicroFet 1.6x1.6 Thin supplier package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDME0106NZT RoHS compliant?

Yes, listed as RoHS3 compliant (status unverified).

What is the maximum on-resistance of the FDME0106NZT?

18 mOhm maximum at 9A and 4.5V gate drive.

What is the gate threshold voltage?

1V maximum at 250µA drain current.

What is the total gate charge?

8.5 nC maximum at 4.5V gate voltage.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	9 A (Ta)
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 10 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	700 mW (Ta)
Rds On (Max) @ Id, Vgs	18 mΩ @ 9A, 4.5V
Supplier Device Package	MicroFet 1.6x1.6 Thin
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	1V @ 250µA