| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,554 pcs
|
7554 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (Maximum) | |
| Configuration | |
| Current | |
| Drain Current (Maximum @ Tc=25 °C) | |
| Drain to Source On Resistance (Maximum @ VGS = 10 V, ID = 17 A) | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Voltage | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs(th) (Max) @ Id | |
| thermal_resistance_junction_to_case (Nominal) |
The FDMD8900 is a dual N-Channel MOSFET from ON Semiconductor integrating two optimized PowerTrench MOSFETs in a single 12-PowerWDFN package. The high-side source and low-side drain are internally connected to minimize source inductance. Q1 is rated for 30V drain-source voltage and 66A continuous current (at TC=25°C) with a maximum on-resistance of 4mOhm at VGS=10V. Q2 is rated for 30V and 42A with a maximum on-resistance of 5.5mOhm at VGS=10V. The device features a gate charge of 35nC at VGS=10V and input capacitance of 2605pF at VDS=15V. Single pulse avalanche energy is 73mJ for Q1 and 54mJ for Q2. The junction-to-case thermal resistance is 4.7°C/W for Q1 and 8.4°C/W for Q2, with a junction-to-ambient thermal resistance of 60°C/W. The operating temperature range is -55°C to 150°C. The surface-mount package enables compact designs and is suitable for buck, boost, and buck-boost converters, computing power supplies, and general point-of-load applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.99 | $2.99 |
| 10+ | $1.93 | $1.93 |
| 100+ | $1.33 | $1.33 |
| 500+ | $1.08 | $1.08 |
| 1,000+ | $1.04 | $1.04 |
| 3,000+ | $0.93 | $0.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30V for both Q1 and Q2.
The FDMD8900 is offered in a 12-PowerWDFN surface mount package (supplier device package 12-Power3.3x5).
The operating junction temperature range is -55°C to 150°C.
Yes, the FDMD8900 is RoHS3 compliant and Pb-free as verified by the datasheet.
At TC=25°C, Q1 can handle 66A continuous and Q2 42A. At TA=25°C, the ratings are 19A for Q1 and 17A for Q2.
At VGS=10V, the maximum on-resistance is 4mOhm for Q1 (at ID=19A) and 5.5mOhm for Q2 (at ID=17A).
The maximum gate charge is 35nC at VGS=10V.