FDMD8680

The FDMD8680 is a dual N-Channel PowerTrench MOSFET from ON Semiconductor, integrating two devices in a common-source configuration. This design minimizes package parasitics and provides an optimized thermal path to the large source pad on the bottom of the 8-PowerWDFN (PQFN8 5x6) package, enabling higher power density in a compact 5x6 mm footprint.

Key electrical specifications include a drain-source voltage (Vdss) of 80V, continuous drain current of 66A at Tc=25°C (42A at Tc=100°C, 16A at Ta=25°C), and pulsed drain current up to 487A. The on-resistance is typically 4.7 mΩ maximum at Vgs=10V and Id=16A, and 6.4 mΩ at Vgs=8V and Id=14A. Gate charge is 73 nC at Vgs=10V, and input capacitance is 5330 pF at Vds=40V.

The device is 100% UIL tested for avalanche energy (337 mJ single pulse) and operates over a junction temperature range of -55°C to +150°C. Power dissipation is 39W at case temperature 25°C and 2.3W at ambient 25°C, with thermal resistance junction-to-case of 3.2°C/W.

Applications include isolated DC-DC synchronous rectifiers and common ground load switches. The FDMD8680 is Pb-Free, Halide Free, and RoHS3 compliant, making it suitable for environmentally conscious designs. Mounting is surface mount, and the supplier device package is 8-Power 5x6.