| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMD8560L is a dual N-channel MOSFET configured as a half bridge, manufactured by ON Semiconductor. It is designed for high-efficiency power conversion applications.
Key electrical specifications include a maximum drain-to-source voltage of 60V, continuous drain current of 22A, and pulsed drain current up to 93A. The typical on-resistance is 3.2mOhm at 22A and 10V gate-source voltage. Total gate charge is 128nC at 10V, and input capacitance is 11130pF at 30V drain-source.
The device is housed in an 8-PowerWDFN surface-mount package with a supplier device package of 8-Power 5x6. It operates over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 2.2W.
Suitable for applications such as synchronous buck converters, motor control, and other power management circuits requiring dual MOSFETs in a compact footprint.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.00 | $5.00 |
| 10+ | $3.33 | $3.33 |
| 100+ | $2.37 | $2.37 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
8-PowerWDFN with supplier device package 8-Power 5x6.
-55°C to 150°C junction temperature.
Unverified; claimed RoHS3 compliant but not confirmed.
22A.
3.2mOhm at 22A and 10V gate voltage.
128nC at 10V gate voltage.