| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
646 pcs
|
646 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMD8530 from On Semiconductor is a dual N-channel MOSFET designed for high-efficiency power management. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 35A. The on-resistance is extremely low at 1.25mOhm maximum when driven at 10V and 35A. The gate charge is 149nC at 10V, and input capacitance is 10395pF at 15V Vds, making it suitable for fast switching applications.
This device is packaged in a surface-mount 8-PowerWDFN (Power56) case, which provides excellent thermal performance. The operating temperature range is -55°C to 150°C, allowing use in harsh environments. The MOSFET is RoHS3 compliant and has a moisture sensitivity level of 1.
Typical applications include DC-DC converters, power management in portable devices, battery protection circuits, and load switching. The dual configuration saves board space and simplifies design in circuits requiring two independent N-channel MOSFETs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.49 | $3.49 |
| 10+ | $2.27 | $2.27 |
| 100+ | $1.59 | $1.59 |
| 500+ | $1.37 | $1.37 |
| 3,000+ | $1.16 | $1.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
35A maximum.
1.25mOhm maximum at 35A drain current and 10V gate voltage.
-55°C to 150°C (junction temperature).
8-PowerWDFN (Power56) surface-mount package.
Yes, RoHS3 compliant (unverified).
149nC maximum at 10V gate voltage.