| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57,160 pcs
|
57160 pcs | On Request | 1 | On Request | On Request | 1341+ | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
2,630 pcs
|
2630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMC8884 is an N-Channel PowerTrench MOSFET designed for high efficiency power management applications. With a drain-source voltage rating of 30V and continuous drain current of 15A at case temperature 25°C, it offers low conduction losses. The device features a maximum Rds(on) of 19mΩ at Vgs=10V and 30mΩ at Vgs=4.5V, making it suitable for low-voltage switching. It is housed in an 8-PowerWDFN surface mount package with a compact 3.3x3.3mm footprint. The MOSFET is lead-free and RoHS compliant, and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 626+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDMC8884 has a maximum drain-source voltage (Vdss) of 30V.
The FDMC8884 is available in an 8-PowerWDFN surface mount package, also known as 8-MLP (3.3x3.3mm).
The FDMC8884 operates over a junction temperature range of -55°C to 150°C.
Yes, the FDMC8884 is RoHS compliant and lead-free, as verified by the datasheet.
The maximum Rds(on) is 19mΩ at Vgs=10V and Id=9A, and 30mΩ at Vgs=4.5V and Id=7.2A.
The maximum gate charge (Qg) is 14nC at Vgs=10V.