| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain Current (Maximum @ Tc) | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ Tc) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMC8676 is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-source voltage rating of 30V and a maximum drain current of 16A at ambient temperature (Ta) and 18A at case temperature (Tc). The device offers a low on-resistance of 5.9mOhm at 14.7A and 10V gate drive, making it suitable for efficient power switching applications. The gate charge is 30nC at 10V, and input capacitance is 1935pF at 15V. The threshold voltage is 3V at 250µA. The MOSFET can be driven with 4.5V or 10V logic levels. Power dissipation is 2.3W at ambient and 41W at case temperature. Operating temperature range is -55°C to 150°C junction. The device is surface mounted in an 8-PowerTDFN package with Power33 supplier device package. It is RoHS3 compliant and has MSL level 1 unlimited. This MOSFET is designed for applications requiring high efficiency and compact size.
| Qty | Low | High |
|---|---|---|
| 271+ | $1.11 | $1.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-PowerTDFN (Power33 supplier device package).
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant, but this status is unverified.
5.9mOhm maximum at 14.7A and 10V gate drive.
16A at ambient temperature and 18A at case temperature.
30nC maximum at 10V gate-source voltage.