| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65 pcs
|
65 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor utilizes advanced POWERTRENCH Shielded Gate technology to achieve extremely low on-resistance while maintaining superior switching performance. It is designed for high-efficiency power conversion applications.
Key electrical specifications include a drain-source voltage (Vdss) of 60V, continuous drain current of 87A at case temperature 25°C (18A at ambient), and pulsed drain current up to 436A. The maximum on-resistance is 4.3mΩ at Vgs=10V and 6.5mΩ at Vgs=4.5V. Gate threshold voltage ranges from 1.0V to 3.0V. The device features low input capacitance (4790pF) and gate charge (88nC) for efficient switching.
The MOSFET is housed in a compact 8-PowerWDFN package (Power33) with surface mount mounting. It is rated for operation from -55°C to 175°C junction temperature. Thermal resistance junction-to-case is 2.3°C/W. The device is RoHS compliant and lead-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.12 | $4.12 |
| 10+ | $2.71 | $2.71 |
| 100+ | $1.90 | $1.90 |
| 500+ | $1.58 | $1.58 |
| 3,000+ | $1.49 | $1.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 60V.
It comes in an 8-PowerWDFN package (Power33) for surface mount.
-55°C to 175°C.
Yes, it is RoHS3 compliant and lead-free.
87A at case temperature 25°C, 18A at ambient.
Maximum 4.3mΩ at Vgs=10V, Id=18A.
Minimum 1.0V, typical 1.8V, maximum 3.0V at Id=250µA.