Mfr Part #:

FDMC86340ET80

N-Channel MOSFET, 80V drain-source voltage, 68A continuous drain current, 6.5mOhm on-resistance. Surface mount in Power33 (8-PowerWDFN) package.

✓ Total Stock: 9,514 pcs

$ Price Range: $1.60 - $4.32

FDMC86340ET80 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	7,971 pcs On Request	7971 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,543 pcs On Request	1543 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDMC86340ET80 Description

Short technical summary and product information.

The FDMC86340ET80 is an N-Channel MOSFET from On Semiconductor, manufactured using advanced POWERTRENCH Shielded Gate technology. This device is designed for high-efficiency power conversion and offers a drain-to-source voltage rating of 80V and a continuous drain current of 68A at case temperature 25°C. The maximum on-resistance is 6.5mOhm at Vgs=10V and Id=14A, with a typical value of 5.0mOhm. The gate charge is 49nC max at Vgs=10V, and input capacitance is 2775pF at Vds=40V.

The MOSFET is rated for an extended junction temperature range of -55°C to 175°C, making it suitable for demanding environments. It is housed in a compact 8-PowerWDFN (Power33) surface-mount package, which offers excellent thermal performance with a junction-to-case thermal resistance of 2.3°C/W. The device is RoHS3 compliant and lead-free.

Typical applications include DC-DC conversion, power management, and high-frequency switching circuits. The Shielded Gate technology provides low on-resistance and fast switching, contributing to improved system efficiency.

FDMC86340ET80 Quick Information

Product Type: N-Channel MOSFET

Series: POWERTRENCH

Canonical Name: FDMC86340ET80 N-Channel MOSFET 80V 68A

Subcategory: N-Channel MOSFET

FDMC86340ET80 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead-free

FDMC86340ET80 Estimated Pricing

Qty	Low	High
1+	$4.32	$4.32
10+	$2.96	$2.96
100+	$2.27	$2.27
500+	$1.88	$1.88
1,000+	$1.81	$1.81
3,000+	$1.60	$1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86340ET80 Features

80V drain-to-source voltage rating.
68A continuous drain current at 25°C.
6.5mOhm maximum on-resistance at 10V.
Shielded Gate MOSFET technology.
Extended junction temperature to 175°C.

FDMC86340ET80 Applications

DC-DC conversion applications.
Power management in portable devices.
High-frequency switching circuits.

FDMC86340ET80 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage rating?

80V.

What is the package type?

8-PowerWDFN (Power33).

What is the operating temperature range?

-55°C to 175°C.

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What is the maximum drain current?

68A continuous at case temperature 25°C, 14A at ambient 25°C.

What is the on-resistance?

6.5mOhm max at Vgs=10V, Id=14A.

What is the gate charge?

49nC max at Vgs=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	14A (Ta), 68A (Tc)
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2775 pF @ 40 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	2.8W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs	6.5mOhm @ 14A, 10V
Supplier Device Package	Power33
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4V @ 250µA