FDMC86261P P-Channel MOSFET rated for -150V drain-source voltage and -9A continuous drain current. Features low on-resistance of 160mOhm at -10V gate drive.
Mfr Part #:

FDMC86261P

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET rated for -150V drain-source voltage and -9A continuous drain current. Features low on-resistance of 160mOhm at -10V gate drive.
✓ Total Stock: 4,543 pcs
$ Price Range: $1.27 - $2.85

FDMC86261P Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 19+ On Request On Request
Non-Authorised Inventory information
1,543 pcs
1543 pcs On Request 1 On Request On Request On Request On Request On Request

FDMC86261P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC86261P Description

Short technical summary and product information.

The FDMC86261P is a P-Channel MOSFET from onsemi's advanced POWERTRENCH technology, designed for fast switching and load switch applications. It features a maximum drain-source voltage of -150V and continuous drain current of -9A at case temperature (25°C) or -2.7A at ambient temperature. The device offers low on-resistance: 160mOhm maximum at VGS = -10V and 185mOhm maximum at VGS = -6V.

 

Key electrical characteristics include a maximum gate threshold voltage of 4V at ID = 250µA, gate charge of 24nC at VGS = 10V, and input capacitance of 1360pF at VDS = 75V. The MOSFET is 100% UIL tested and supports single pulse avalanche energy up to 121mJ. Power dissipation is rated at 40W at case temperature and 2.3W at ambient.

 

The device is housed in an 8-PowerWDFN package (8-MLP 3.3x3.3) with surface mount mounting. It is Pb-Free, Halide Free, and RoHS3 compliant, making it suitable for environmentally conscious designs. The operating junction temperature range is -55°C to +150°C.

FDMC86261P Quick Information

Product Type: P-Channel MOSFET
Series: PowerTrench
Canonical Name: FDMC86261P P-Channel MOSFET, 150V, 9A, 160mOhm, 8-PowerWDFN
Subcategory: P-Channel MOSFET

FDMC86261P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDMC86261P Estimated Pricing

Qty Low High
1+ $2.85 $2.85
10+ $1.85 $1.85
100+ $1.27 $1.27
3,000+ $1.27 $1.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86261P Features

  • P-Channel MOSFET with -150V drain-source voltage.
  • Low on-resistance of 160mOhm at -10V gate drive.
  • Optimized for fast switching applications.
  • 100% UIL tested for reliability.
  • Pb-Free, Halide Free, and RoHS compliant.

FDMC86261P Applications

  • Ideal for active clamp switch circuits.
  • Suitable for load switch applications.
  • Used in power management systems.

FDMC86261P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

-150V

What package does the FDMC86261P come in?

8-PowerWDFN (8-MLP 3.3x3.3)

What is the operating temperature range?

-55°C to +150°C (junction temperature)

Is the FDMC86261P RoHS compliant?

Yes, it is RoHS3 compliant, Pb-Free, and Halide Free.

What is the maximum drain current?

Continuous drain current is -9A at case temperature 25°C, -2.7A at ambient temperature. Pulsed drain current is -20A.

What is the gate threshold voltage?

Maximum gate threshold voltage is 4V at ID = 250µA.

What is the on-resistance at different gate voltages?

Maximum Rds(on) is 160mOhm at VGS = -10V, ID = -2.4A; 185mOhm at VGS = -6V, ID = -2.2A.

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