FDMC86260 The FDMC86260 is an N-Channel Shielded Gate MOSFET from On Semiconductor with 150V drain-source voltage and 5.4A continuous drain current. It features low 34 mOhm on-resistance.
Mfr Part #:

FDMC86260

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMC86260 is an N-Channel Shielded Gate MOSFET from On Semiconductor with 150V drain-source voltage and 5.4A continuous drain current. It features low 34 mOhm on-resistance.
✓ Total Stock: 24,246 pcs
$ Price Range: $1.40 - $3.79

FDMC86260 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
22,600 pcs
22600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,646 pcs
1646 pcs On Request 1 On Request On Request On Request On Request On Request

FDMC86260 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC86260 Description

Short technical summary and product information.

The FDMC86260 is an N-Channel MOSFET produced using On Semiconductor's advanced POWERTRENCH process with Shielded Gate technology. This device is designed for DC-DC conversion applications.

 

Key electrical specifications include a maximum drain-source voltage of 150V and continuous drain current ratings of 25A at Tc=25°C, 16A at Tc=100°C, and 5.4A at Ta=25°C. The MOSFET has a maximum on-resistance of 34 mOhm at Vgs=10V and Id=5.4A. Gate threshold voltage ranges from 2V to 4V. Total gate charge is 21 nC at Vgs=10V and input capacitance is 1330 pF at Vds=75V. The device is rated for a maximum power dissipation of 54W at Tc=25°C and 2.3W at Ta=25°C. Operating junction temperature range is -55°C to 150°C.

 

The FDMC86260 is housed in an 8-PowerWDFN package (Power33) and is surface mount compatible. It supports a drive voltage of 6V and 10V. The device is 100% UIL tested and rated for single pulse avalanche energy of 121 mJ. It is Pb-Free, Halide Free, and RoHS compliant.

FDMC86260 Quick Information

Product Type: MOSFET
Series: FDMC86260
Canonical Name: On Semiconductor FDMC86260 N-Channel Shielded Gate MOSFET
Subcategory: Single

FDMC86260 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC86260 Estimated Pricing

Qty Low High
1+ $3.79 $3.79
10+ $2.48 $2.48
100+ $1.80 $1.80
500+ $1.51 $1.51
1,000+ $1.40 $1.40
3,000+ $1.40 $1.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86260 Features

  • N-Channel Shielded Gate MOSFET technology.
  • 150V maximum drain-source voltage rating.
  • 34 mOhm maximum on-resistance at 10V.
  • Surface mount Power33 8-PowerWDFN package.
  • 100% UIL tested and RoHS compliant.

FDMC86260 Applications

  • Suitable for DC-DC conversion circuits.
  • Use in high-efficiency power switching designs.
  • Ideal for low on-resistance switching applications.

FDMC86260 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the FDMC86260?

150 V.

What is the continuous drain current rating at Ta=25°C?

5.4 A.

What is the maximum on-resistance (Rds(on)) at Vgs=10V?

34 mOhm at Id=5.4 A.

What package does the FDMC86260 use?

8-PowerWDFN (Power33).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDMC86260 RoHS compliant?

Yes, the datasheet states RoHS compliant, Pb-Free, and Halide Free.

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