| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,738 pcs
|
1738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Pitch | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor utilizes advanced Shielded Gate POWERTRENCH technology, optimized for low on-resistance and efficient switching. The FDMC8622 is designed for high-performance power management applications.
Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 16A at case temperature 25°C (4A at ambient), and pulsed drain current of 30A. The on-resistance is typically 56mOhm at Vgs = 10V and Id = 4A, and 90mOhm at Vgs = 6V and Id = 3A. Gate threshold voltage is a maximum of 4V at 250µA. With a gate charge of 7.3nC and input capacitance of 402pF, the device offers good switching performance for moderate frequency applications.
The FDMC8622 is housed in a compact 8-PowerWDFN (WDFN-8, MLP 3.3x3.3mm) surface mount package with 0.65mm pitch. Thermal characteristics include junction-to-case resistance of 4.0°C/W and junction-to-ambient resistance of 53°C/W (on 1in² copper pad). Operating junction temperature ranges from -55°C to 150°C. The device is Pb-free and RoHS compliant, and 100% UIL tested for unclamped inductive switching ruggedness with a single pulse avalanche energy rating of 37mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.51 | $2.51 |
| 10+ | $1.62 | $1.62 |
| 100+ | $1.10 | $1.10 |
| 500+ | $0.88 | $0.88 |
| 1,000+ | $0.83 | $0.83 |
| 3,000+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
It comes in an 8-PowerWDFN (WDFN-8, MLP 3.3x3.3mm) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and Pb-free as per the datasheet.
Maximum continuous drain current is 16A at case temperature 25°C, and 4A at ambient temperature 25°C.
The maximum drain-source on-resistance is 56mOhm at Vgs = 10V and Id = 4A.
The single pulse avalanche energy is 37mJ at starting Tj = 25°C, L = 3.0mH, IAS = 5.0A.