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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,512 pcs
|
46512 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Breakdown Voltage Temperature Coefficient | |
| Current | |
| Drain Current (Maximum @ Ta=25 °C, Note 1) | |
| Drain Current, Pulsed | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Leakage Current | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ TA = 25 °C, Note 1) | |
| Rds On (Max) @ Id, Vgs | |
| Rds On (Maximum @ Vgs=6.5 V, Id=10 A) | |
| Single Pulse Avalanche Energy | |
| Standard Package Quantity | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance Junction-to-Ambient | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The FDMC86184 is a high-performance N-Channel MOSFET manufactured by On Semiconductor using advanced POWERTRENCH Shielded Gate technology. This device is designed for efficient power management in DC-DC converters, synchronous rectification, motor drives, and solar applications. It offers a maximum drain-source voltage of 100V and a continuous drain current of 57A at Tc=25°C (12A at Ta=25°C). The typical on-resistance is as low as 8.5mΩ at Vgs=10V and 21A, with a maximum gate threshold voltage of 4V. The device features a low gate charge of 20nC at 6V and an input capacitance of 2090pF at 50V, enabling fast switching with reduced losses. The FDMC86184 is housed in a compact 8-PowerWDFN (8-PQFN 3.3x3.3mm) surface-mount package, suitable for space-constrained designs. It is rated for operating junction temperatures from -55°C to 150°C and has a power dissipation of 54W at Tc=25°C. The MOSFET is 100% UIL tested and offers ESD protection (HBM>1kV, CDM>2kV). It is Pb-Free and RoHS compliant, with an MSL1 rating for robust manufacturing.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.30 | $3.30 |
| 10+ | $2.02 | $2.02 |
| 100+ | $1.50 | $1.50 |
| 500+ | $1.26 | $1.26 |
| 1,000+ | $1.17 | $1.17 |
| 3,000+ | $1.09 | $1.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The device is available in an 8-PowerWDFN package (supplier package 8-PQFN 3.3x3.3 mm).
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and Pb-Free as per the datasheet.
The maximum continuous drain current is 57 A at Tc=25°C and 12 A at Ta=25°C.
The maximum on-resistance is 8.5 mΩ at Vgs=10V, Id=21A.
The maximum gate charge is 20 nC at Vgs=6V.