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FDMC86160ET100 N-Channel MOSFET with 100V drain-source voltage, 43A continuous current at case temperature, and 14mΩ on-resistance. Surface mount Power33 package.
Mfr Part #:

FDMC86160ET100

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage, 43A continuous current at case temperature, and 14mΩ on-resistance. Surface mount Power33 package.
✓ Total Stock: 1,000 pcs
$ Price Range: $1.44 - $3.85

FDMC86160ET100 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMC86160ET100 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMC86160ET100 Description

Short technical summary and product information.

This N-Channel MOSFET is produced using onsemi's advanced POWERTRENCH process that incorporates Shielded Gate technology. The process has been optimized for the on-state resistance, making the device well-suited for applications requiring ultra low RDS(on) in small spaces.

 

Key electrical specifications include a drain-source voltage of 100 V, continuous drain current of 43 A at case temperature 25°C (9 A at ambient 25°C), and pulsed drain current of 204 A. The maximum on-resistance is 14 mΩ at VGS=10 V and ID=9 A, and 23 mΩ at VGS=6 V and ID=7 A. Gate charge is 22 nC at VGS=10 V, and input capacitance is 1290 pF at VDS=50 V. Single pulse avalanche energy is rated at 181 mJ.

 

The device is designed for bridge topologies, synchronous rectifiers, high performance VRM, POL, and ORing functions. It is housed in an 8-PowerWDFN (Power33) surface mount package, with an extended junction temperature range of -55°C to 175°C. Power dissipation is 65 W at case temperature 25°C and 2.8 W at ambient 25°C.

FDMC86160ET100 Quick Information

Product Type: MOSFET - N-Channel
Series: POWERTRENCH
Canonical Name: N-Channel MOSFET, 100V, 43A, Power33 Package
Subcategory: Single MOSFET

FDMC86160ET100 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-free

FDMC86160ET100 Estimated Pricing

Qty Low High
1+ $3.85 $3.85
10+ $2.52 $2.52
100+ $1.76 $1.76
500+ $1.44 $1.44
3,000+ $1.44 $1.44

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86160ET100 Features

  • Shielded Gate MOSFET technology for low on-resistance.
  • Max RDS(on) of 14 mΩ at 10 V gate drive.
  • Continuous drain current of 43 A at case temperature 25°C.
  • Extended junction temperature rating to 175°C.
  • Surface mount Power33 package.

FDMC86160ET100 Applications

  • Used in bridge topologies and synchronous rectifiers.
  • Suitable for high-performance voltage regulator modules.
  • Ideal for point-of-load converters and ORing functions.

FDMC86160ET100 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMC86160ET100?

100 V.

What package is the FDMC86160ET100 available in?

8-PowerWDFN (Power33) surface mount package.

What is the operating temperature range?

-55°C to 175°C.

Is the FDMC86160ET100 RoHS compliant?

Yes, RoHS3 compliant with lead-free termination.

What is the continuous drain current at case temperature 25°C?

43 A.

What is the on-resistance at VGS=10V?

14 mΩ maximum at ID=9A.

What is the gate charge?

22 nC at VGS=10V.

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