FDMC86139P P-Channel MOSFET, -100V drain-source voltage, -4.4A continuous drain current (Ta), max 67mOhm on-resistance at Vgs=-10V. Surface mount in 8-PowerWDFN package.
Mfr Part #:

FDMC86139P

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET, -100V drain-source voltage, -4.4A continuous drain current (Ta), max 67mOhm on-resistance at Vgs=-10V. Surface mount in 8-PowerWDFN package.
✓ Total Stock: 59,622 pcs
$ Price Range: $1.05 - $2.90

FDMC86139P Available from 7 distributors

✓ Authorised
✓ Non-Authorised

FDMC86139P Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC86139P Description

Short technical summary and product information.

The FDMC86139P is a P-Channel PowerTrench MOSFET from On Semiconductor, designed for applications requiring low on-state resistance and efficient switching. It features a maximum drain-to-source voltage of -100V and continuous drain current of -4.4A at ambient temperature (25°C) or -15A at case temperature (25°C).

 

The device offers a maximum on-resistance of 67 mOhm at Vgs = -10V and Id = -4.4A, and 89 mOhm at Vgs = -6V and Id = -3.6A. It includes a low gate charge of 22 nC and an input capacitance of 1335 pF, supporting fast switching. The MOSFET is 100% avalanche energy tested, with a single pulse avalanche energy rating of 121 mJ.

 

The FDMC86139P is housed in a compact 8-PowerWDFN package (8-MLP 3.3x3.3mm) with a 0.65mm lead pitch, suitable for surface mount assembly. It is RoHS compliant and lead-free, with an operating junction temperature range of -55°C to +150°C. Power dissipation is rated at 40W at case temperature and 2.3W at ambient temperature.

FDMC86139P Quick Information

Product Type: P-Channel MOSFET
Series: C0041
Canonical Name: FDMC86139P P-Channel MOSFET, -100V, -15A, 67mohm, 8-PowerWDFN
Subcategory: Single MOSFET

FDMC86139P Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDMC86139P Estimated Pricing

Qty Low High
1+ $2.90 $2.90
10+ $1.74 $1.74
100+ $1.30 $1.30
500+ $1.05 $1.05
3,000+ $1.05 $1.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86139P Features

  • P-Channel PowerTrench MOSFET technology.
  • Max drain-source voltage rating of -100V.
  • Low on-resistance of 67 mOhm at -10V.
  • 100% avalanche energy tested (UIL).
  • RoHS compliant and lead-free package.

FDMC86139P Applications

  • Active clamp switch circuits.
  • Load switch for power distribution.
  • Fast switching power applications.

FDMC86139P FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDMC86139P?

The maximum drain-to-source voltage (Vds) is 100 V.

What is the maximum continuous drain current at 25°C ambient?

At Ta = 25°C, the maximum continuous drain current is -4.4 A. At Tc = 25°C, it is -15 A.

What is the on-resistance of this MOSFET?

The maximum drain-to-source on-resistance is 67 mOhm at Vgs = -10 V and Id = -4.4 A, and 89 mOhm at Vgs = -6 V and Id = -3.6 A.

What is the package type of the FDMC86139P?

The device is housed in an 8-PowerWDFN package (8-MLP 3.3x3.3mm) for surface mount mounting.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDMC86139P RoHS compliant?

Yes, the device is RoHS3 compliant and lead-free (Pb-Free).

What is the gate threshold voltage?

The maximum gate threshold voltage is 4 V at Id = 250 µA.

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