FDMC86116LZ N-Channel MOSFET with 100V drain-source voltage, 7.5A continuous current, and 103mOhm on-resistance. Surface mount in 8-PowerWDFN package.
Mfr Part #:

FDMC86116LZ

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage, 7.5A continuous current, and 103mOhm on-resistance. Surface mount in 8-PowerWDFN package.
✓ Total Stock: 2,370 pcs
$ Price Range: $0.48 - $1.81

FDMC86116LZ Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,370 pcs
1370 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDMC86116LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC86116LZ Description

Short technical summary and product information.

The FDMC86116LZ is an N-Channel MOSFET from On Semiconductor, utilizing advanced POWERTRENCH Shielded Gate technology. It features a maximum drain-source voltage of 100V and continuous drain current of 7.5A at case temperature 25°C (3.3A at ambient). The on-resistance is 103mOhm maximum at Vgs=10V and 153mOhm at Vgs=4.5V, enabling efficient power switching.

 

This device offers a gate charge of 6nC and input capacitance of 310pF, contributing to fast switching performance. It includes ESD protection exceeding 3kV (HBM) and is 100% UIL tested for ruggedness. The operating junction temperature range is -55°C to 150°C.

 

Packaged in a compact 8-PowerWDFN (8-MLP 3.3x3.3) surface mount package, it is suitable for space-constrained designs. The FDMC86116LZ is Pb-Free and RoHS compliant, making it appropriate for environmentally conscious applications. Typical applications include DC-DC conversion and power management.

FDMC86116LZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 100V, 7.5A, 103mOhm, 8-PowerWDFN
Subcategory: N-Channel MOSFET

FDMC86116LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC86116LZ Estimated Pricing

Qty Low High
1+ $1.81 $1.81
10+ $1.15 $1.15
100+ $0.77 $0.77
500+ $0.61 $0.61
1,000+ $0.56 $0.56
3,000+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86116LZ Features

  • N-Channel Shielded Gate MOSFET.
  • 100V drain-source voltage rating.
  • 7.5A continuous drain current.
  • Low on-resistance of 103mOhm.
  • ESD protection >3kV HBM.

FDMC86116LZ Applications

  • Used in DC-DC conversion circuits.
  • Suitable for power management applications.
  • Ideal for load switching.

FDMC86116LZ FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V maximum.

What package does this MOSFET come in?

8-PowerWDFN (8-MLP 3.3x3.3) surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is this device RoHS compliant?

Yes, it is RoHS compliant and Pb-Free.

What is the gate threshold voltage?

2.2V maximum at Id=250µA.

What is the on-resistance at Vgs=10V?

103mOhm maximum at Id=3.3A, Vgs=10V.

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