| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
156,000 pcs
|
156000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMC86106LZ is an N-Channel MOSFET from On Semiconductor, designed for high-efficiency power management applications. It features a drain-to-source voltage of 100V and a continuous drain current of 3.3A at ambient temperature (Ta) and 7.5A at case temperature (Tc). The device utilizes PowerTrench technology to achieve low on-resistance of 103mOhm maximum at Vgs=10V and Id=3.3A.
The MOSFET offers low gate charge of 6nC at Vgs=10V and input capacitance of 310pF at Vds=50V, enabling fast switching performance. The maximum gate threshold voltage is 2.2V at Id=250µA. Power dissipation is rated at 2.3W (Ta) and 19W (Tc), with an operating junction temperature range of -55°C to 150°C.
The device is housed in a surface-mount 8-PowerWDFN package (8-MLP 3.3x3.3mm). It is suitable for various applications such as DC-DC converters, power management, and load switching. The package is RoHS3 compliant and MSL level 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.52 | $0.52 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
8-PowerWDFN surface mount package, also known as 8-MLP (3.3x3.3mm).
-55°C to 150°C (junction temperature).
RoHS3 compliant.
3.3A at ambient temperature (Ta) and 7.5A at case temperature (Tc).
103mOhm at Vgs=10V, Id=3.3A.