FDMC86102LZ N-Channel MOSFET with 100V drain-source voltage, 22A continuous drain current, and low 24mOhm on-resistance. Surface mount in 8-MLP (3.3x3.3) package.
Mfr Part #:

FDMC86102LZ

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage, 22A continuous drain current, and low 24mOhm on-resistance. Surface mount in 8-MLP (3.3x3.3) package.
✓ Total Stock: 21,738 pcs
$ Price Range: $1.30 - $2.89

FDMC86102LZ Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20,019 pcs
20019 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,619 pcs
1619 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

FDMC86102LZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC86102LZ Description

Short technical summary and product information.

The FDMC86102LZ is an N-Channel logic-level MOSFET from On Semiconductor, built using the advanced POWERTRENCH process with Shielded Gate technology. It features a maximum drain-source voltage of 100V and continuous drain current of 22A at Tc=25°C. The device offers low on-resistance of 24mOhm typical at Vgs=10V and 35mOhm at Vgs=4.5V, making it suitable for DC-DC switching applications.

 

With a gate charge of 22nC and input capacitance of 1290pF, the FDMC86102LZ provides efficient switching performance. It includes an integrated gate-source Zener diode for enhanced ESD protection exceeding 6kV HBM. The device is 100% avalanche tested with a single pulse avalanche energy rating of 84mJ.

 

Thermal management is supported by a junction-to-case thermal resistance of 3°C/W and a maximum power dissipation of 41W at Tc=25°C. The operating junction temperature range is -55°C to 150°C.

 

The MOSFET is housed in a compact 8-PowerWDFN surface mount package (8-MLP 3.3x3.3mm) and is supplied in tape and reel with 3000 units per reel. It is RoHS compliant and Pb-free, halide free per the datasheet.

FDMC86102LZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 100V, 22A, 8-PowerWDFN
Subcategory: N-Channel MOSFET

FDMC86102LZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC86102LZ Estimated Pricing

Qty Low High
1+ $2.89 $2.89
10+ $1.78 $1.78
100+ $1.30 $1.30
3,000+ $1.30 $1.30

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86102LZ Features

  • Shielded Gate MOSFET technology for low Rds(on).
  • Max drain-source voltage of 100V.
  • Continuous drain current up to 22A.
  • Low on-resistance 24mOhm at 10V.
  • ESD protection exceeding 6kV HBM.

FDMC86102LZ Applications

  • Ideal for DC-DC switching power supplies.
  • Used in power management circuits.
  • Suitable for load switching applications.
  • Applicable in battery protection circuits.

FDMC86102LZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

100V.

What is the package type?

8-PowerWDFN (8-MLP 3.3x3.3mm).

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FDMC86102LZ RoHS compliant?

Yes, RoHS3 compliant and Pb-free, Halide free per datasheet.

What is the continuous drain current rating?

22A at case temperature 25°C, 7A at ambient temperature 25°C.

What is the gate threshold voltage range?

1.0V to 2.2V at Id=250µA, typical 1.6V.

What is the on-resistance at Vgs=10V?

24mOhm maximum at Vgs=10V, Id=6.5A.

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