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FDMC86102L N-Channel MOSFET with 100V drain-source voltage rating, 18A continuous drain current, and low on-resistance of 23mOhm. Suitable for DC-DC conversion applications.
Mfr Part #:

FDMC86102L

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage rating, 18A continuous drain current, and low on-resistance of 23mOhm. Suitable for DC-DC conversion applications.
✓ Total Stock: 777 pcs
$ Price Range: $0.86 - $2.45

FDMC86102L Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
750 pcs
On Request
750 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
27 pcs
On Request
27 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDMC86102L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMC86102L Description

Short technical summary and product information.

The FDMC86102L is an N-Channel MOSFET from On Semiconductor, manufactured using the advanced POWERTRENCH process with Shielded Gate technology. This device is designed for efficient power switching in DC-DC conversion circuits.

 

Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 18A at case temperature (7A at ambient), and a maximum on-resistance of 23mOhm at Vgs=10V and Id=7A. The gate threshold voltage is 3V maximum at Id=250µA. Gate charge is 22nC at Vgs=10V, and input capacitance is 1330pF at Vds=50V.

 

The device is housed in a surface-mount 8-PowerWDFN package (8-MLP 3.3x3.3mm) with a low profile of 1mm maximum. Power dissipation is rated at 41W at case temperature and 2.3W at ambient. Operating junction temperature range is -55°C to 150°C.

FDMC86102L Quick Information

Product Type: N-Channel MOSFET
Series: FDMC86102L
Canonical Name: N-Channel MOSFET, 100V, 18A, 23mOhm, 8-PowerWDFN
Subcategory: N-Channel MOSFET

FDMC86102L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC86102L Estimated Pricing

Qty Low High
1+ $2.45 $2.45
10+ $1.58 $1.58
100+ $1.08 $1.08
500+ $0.86 $0.86
3,000+ $0.86 $0.86

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC86102L Features

  • N-Channel MOSFET with Shielded Gate technology.
  • Max Rds(on) of 23mOhm at 10V.
  • 100V drain-source voltage rating.
  • 18A continuous drain current.
  • Surface mount 8-PowerWDFN package.

FDMC86102L Applications

  • DC-DC conversion circuits.

FDMC86102L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V.

What package is the FDMC86102L available in?

8-PowerWDFN (8-MLP 3.3x3.3mm).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FDMC86102L RoHS compliant?

RoHS3 compliant (unverified).

What is the gate charge of the FDMC86102L?

22 nC at Vgs=10V.

What is the input capacitance?

1330 pF at Vds=50V.

What is the on-resistance?

23 mOhm at Vgs=10V, Id=7A.

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