| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,440 pcs
|
5440 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
80 pcs
|
80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Avalanche Energy (EAS) (Typical @ Q 1) | |
| Avalanche Energy (EAS) (Typical @ Q 2) | |
| Breakdown Voltage Temperature Coefficient (Typical @ Q 1) | |
| Breakdown Voltage Temperature Coefficient (Typical @ Q 2) | |
| Configuration | |
| Current | |
| Drain Current (Continuous) (Maximum @ TA = 25 °C, Q 2) | |
| Drain Current (Continuous) - Package Limited (Maximum @ TC = 25 °C, Q 1) | |
| Drain Current (Continuous) - Package Limited (Maximum @ TC = 25 °C, Q 2) | |
| Drain Current (Continuous) - Silicon Limited (Maximum @ TC = 25 °C, Q 1) | |
| Drain Current (Continuous) - Silicon Limited (Maximum @ TC = 25 °C, Q 2) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate to Source Voltage (Vgs) | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature | |
| Pitch | |
| Power | |
| Power Dissipation (Maximum @ TA = 25 °C, Q 1, note 1 A) | |
| Power Dissipation (Maximum @ TA = 25 °C, Q 1, note 1 c) | |
| Power Dissipation (Maximum @ TA = 25 °C, Q 2, note 1 b) | |
| Power Dissipation (Maximum @ TA = 25 °C, Q 2, note 1 d) | |
| Pulsed Drain Current (Maximum @ Q 1) | |
| Pulsed Drain Current (Maximum @ Q 2) | |
| Rds On (Max) (Maximum @ Id = 5 A, Vgs = 4.5 V) | |
| Rds On (Max) (Maximum @ Id = 7.2 A, Vgs = 4.5 V) | |
| Rds On (Max) (Maximum @ Id = 8.5 A, Vgs = 10 V) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance, Junction to Ambient (RθJA) (Typical @ Q 1, note 1 A) | |
| Thermal Resistance, Junction to Ambient (RθJA) (Typical @ Q 1, note 1 c) | |
| Thermal Resistance, Junction to Ambient (RθJA) (Typical @ Q 2, note 1 b) | |
| Thermal Resistance, Junction to Ambient (RθJA) (Typical @ Q 2, note 1 d) | |
| Thermal Resistance, Junction to Case (RθJC) (Typical @ Q 1) | |
| Thermal Resistance, Junction to Case (RθJC) (Typical @ Q 2) | |
| Vgs(th) (Max) @ Id | |
| power_dissipation (Maximum @ TA=25 °C, Q 2) |
The FDMC8200S from ON Semiconductor integrates two N-channel PowerTrench MOSFETs in a compact 8-PowerWDFN (3x3mm Power33) package. The switch node is internally connected to simplify synchronous buck converter layouts. Q1 (control MOSFET) offers a maximum Rds(on) of 20mΩ at 10V, while Q2 (synchronous MOSFET) achieves 10mΩ at 10V. Both devices support logic-level gate drive with a maximum threshold voltage of 3V. The part is rated for a drain-source voltage of 30V and operates over a junction temperature range of -55°C to +150°C. It is RoHS3 compliant, Pb-free, and halogen-free. Typical applications include mobile computing, mobile internet devices, and general point-of-load converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.44 | $1.44 |
| 10+ | $0.91 | $0.91 |
| 100+ | $0.58 | $0.58 |
| 500+ | $0.47 | $0.47 |
| 1,000+ | $0.43 | $0.43 |
| 3,000+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30V for both Q1 and Q2.
It is available in an 8-PowerWDFN package (also known as 8-Power33 or 3x3 mm MLP).
The operating junction temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant, Pb-free, and Halogen free as verified by the datasheet.
The maximum gate charge (Qg) is 10 nC at Vgs = 10V.
At TA=25°C, Q1 is rated for 6A and Q2 for 8.5A continuous drain current.
Yes, it has a logic-level gate feature and maximum threshold voltage of 3V at 250µA.