| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMC7660DC is an N-Channel power MOSFET from onsemi, manufactured using the advanced POWERTRENCH process. It is designed for high-efficiency power conversion applications, offering a maximum drain-source voltage of 30 V and a continuous drain current of 40 A (package limited at Tc=25°C). The device features an ultra-low on-resistance of 2.2 mΩ maximum at Vgs=10 V, making it suitable for synchronous rectification and DC/DC converters.
The MOSFET incorporates the Dual Cool top-side cooling PQFN package (8-PowerTDFN, 3.3x3.3 mm, 0.65 mm pitch) which provides excellent thermal performance with a junction-to-case thermal resistance of 1.6 °C/W (bottom drain) and 4.3 °C/W (top source). The device also includes a SyncFET Schottky body diode for improved efficiency.
Key electrical characteristics include a maximum gate threshold voltage of 2.5 V, a gate charge of 76 nC at 10 V, and an input capacitance of 5170 pF at 15 V. The FDMC7660DC is RoHS3 compliant, Pb-free, and Halide free. It is well-suited for telecom secondary side rectification, high-end server/workstation power supplies, and other high-current switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.45 | $2.45 |
| 10+ | $1.58 | $1.58 |
| 100+ | $1.57 | $1.57 |
| 1,000+ | $1.39 | $1.39 |
| 3,000+ | $0.94 | $0.94 |
| 6,000+ | $0.89 | $0.89 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 30 V.
The continuous drain current is 40 A at Tc=25°C (package limited), and 150 A silicon limited at Tc=25°C.
Maximum on-resistance is 2.2 mΩ at Vgs=10 V, Id=22 A, and 3.3 mΩ at Vgs=4.5 V, Id=18 A.
The junction operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant, Pb-free, and Halide free.
It is available in an 8-PowerTDFN package (PQFN8 3.3x3.3 mm, 0.65 mm pitch) known as Dual Cool 33.
The maximum gate threshold voltage is 2.5 V at Id=250 µA.