FDMC7208S Dual N-channel MOSFET with 30V drain-source voltage and continuous drain currents of 12A (Q1) and 16A (Q2).
Mfr Part #:

FDMC7208S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel MOSFET with 30V drain-source voltage and continuous drain currents of 12A (Q1) and 16A (Q2).
✓ Total Stock: 33,000 pcs
$ Price Range: $0.47 - $1.90

FDMC7208S Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
33,000 pcs
33000 pcs On Request 1 On Request On Request 18+ On Request On Request

FDMC7208S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDMC7208S Description

Short technical summary and product information.

The FDMC7208S is a dual N-channel MOSFET by On Semiconductor, featuring two 30V rated channels in a compact 8-PowerWDFN (Power33) surface-mount package. Q1 offers a continuous drain current of 12A with a maximum on-resistance of 9.0 mΩ at 10V gate drive, while Q2 delivers 16A with 6.4 mΩ. The device incorporates logic-level gate technology, enabling efficient switching at lower gate voltages.

 

Key electrical characteristics include a maximum gate threshold voltage of 3V, total gate charge of 18 nC, and input capacitance of 1130 pF. The MOSFET is designed for general-purpose point-of-load applications in computing, communications, and notebook systems. The dual-channel configuration saves board space and simplifies layout in synchronous buck converters and other power management circuits.

 

The package is optimized for thermal performance, with a maximum power dissipation of 1.9W per channel at 25°C ambient. The operating junction temperature range spans -55°C to 150°C, suitable for a wide range of environments. The device is supplied in tape and reel packaging with 3000 units per reel, and is RoHS3 compliant.

FDMC7208S Quick Information

Product Type: Dual N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDMC7208S Dual N-Channel MOSFET, 30V, 12A/16A, 8-PowerWDFN
Subcategory: Arrays

FDMC7208S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC7208S Estimated Pricing

Qty Low High
1+ $1.90 $1.90
10+ $1.19 $1.19
100+ $0.78 $0.78
500+ $0.62 $0.62
1,000+ $0.56 $0.56
3,000+ $0.47 $0.47

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC7208S Features

  • Dual N-channel configuration for compact designs.
  • 30V maximum drain-source voltage rating.
  • Low on-resistance: 9.0 mΩ (Q1) and 6.4 mΩ (Q2).
  • Logic-level gate drive for 4.5V operation.
  • RoHS3 compliant and Pb-free.

FDMC7208S Applications

  • Point-of-load converters in computing systems.
  • Synchronous buck regulators for notebooks.
  • General-purpose power switching in communications.
  • Battery management in portable devices.

FDMC7208S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMC7208S?

30 V.

What is the continuous drain current rating of each channel?

Q1: 12 A, Q2: 16 A at TA = 25°C.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package is the FDMC7208S available in?

8-PowerWDFN (Supplier Device Package: 8-Power33 (3x3)).

Is the FDMC7208S RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free per the datasheet.

What is the on-resistance of each channel?

Q1: 9.0 mΩ max at VGS=10V, ID=12A; Q2: 6.4 mΩ max at VGS=10V, ID=16A.

Does the FDMC7208S support logic-level gate drive?

Yes, the FET feature is logic level gate, and the datasheet specifies on-resistance at VGS=4.5V for both channels.

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