FDMC6675BZ P-Channel PowerTrench MOSFET with -30V drain-source voltage, 9.5A continuous drain current (Ta=25°C), and 14.4mΩ on-resistance at Vgs=-10V. Surface mount in 8-MLP package.
Mfr Part #:

FDMC6675BZ

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel PowerTrench MOSFET with -30V drain-source voltage, 9.5A continuous drain current (Ta=25°C), and 14.4mΩ on-resistance at Vgs=-10V. Surface mount in 8-MLP package.
✓ Total Stock: 45,653 pcs
$ Price Range: $0.50 - $1.87

FDMC6675BZ Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FDMC6675BZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC6675BZ Description

Short technical summary and product information.

The FDMC6675BZ is a P-Channel PowerTrench MOSFET from onsemi designed for load switch applications. It features a maximum drain-source voltage of -30V and continuous drain current ratings of 9.5A at ambient temperature (Ta=25°C) and 20A at case temperature (Tc=25°C). The device offers low on-resistance: 14.4mΩ maximum at Vgs=-10V and 27mΩ maximum at Vgs=-4.5V.

 

Key electrical characteristics include a gate threshold voltage of 3V maximum at Id=250µA, input capacitance of 2865pF at Vds=15V, and gate charge of 65nC at Vgs=10V. The MOSFET provides HBM ESD protection of 8kV typical and supports an extended gate-source voltage range of ±25V for battery applications.

 

The FDMC6675BZ is housed in a surface-mount WDFN8 3.3x3.3mm package (8-MLP) with a standard tape and reel quantity of 3000 pieces. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. Thermal characteristics include a junction-to-case thermal resistance of 3.4°C/W and junction-to-ambient of 53°C/W, with an operating junction temperature range of -55°C to 150°C.

FDMC6675BZ Quick Information

Product Type: MOSFET
Series: PowerTrench
Canonical Name: FDMC6675BZ P-Channel PowerTrench MOSFET
Subcategory: Single MOSFET

FDMC6675BZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC6675BZ Estimated Pricing

Qty Low High
1+ $1.87 $1.87
10+ $1.19 $1.19
100+ $0.80 $0.80
500+ $0.63 $0.63
1,000+ $0.58 $0.58
3,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC6675BZ Features

  • P-Channel PowerTrench MOSFET for load switching.
  • Max Rds(on) of 14.4mΩ at Vgs=-10V.
  • HBM ESD protection typical 8kV.
  • Extended gate-source voltage range ±25V.
  • Pb-Free, Halogen Free, RoHS compliant.

FDMC6675BZ Applications

  • Load switch in notebook and server.
  • Notebook battery pack power management.
  • General purpose load switching applications.

FDMC6675BZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMC6675BZ?

The maximum drain-source voltage (Vds) is -30V.

What is the maximum continuous drain current at ambient temperature?

The maximum continuous drain current at Ta=25°C is 9.5A.

What is the on-resistance at Vgs=-10V?

The maximum drain-source on-resistance at Vgs=-10V and Id=-9.5A is 14.4mΩ.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDMC6675BZ RoHS compliant?

Yes, the device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free as per the datasheet.

What package does the FDMC6675BZ come in?

It is available in a surface-mount WDFN8 3.3x3.3mm package (8-MLP).

What is the gate threshold voltage?

The maximum gate threshold voltage at Id=250µA is 3V.

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