| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
FDMC5614P-B8 is a P-channel MOSFET (metal oxide) from On Semiconductor. It is rated for a drain-source voltage of 60V and a continuous drain current of 13.5A at case temperature (Tc) or 5.7A at ambient temperature (Ta). The device is offered in a surface-mount 8-PowerWDFN package with a compact 3.3mm x 3.3mm footprint.
The MOSFET features a maximum drain-source on-resistance of 100mΩ at Vgs = 10V and Id = 5.7A. Gate charge is 20nC at Vgs = 10V, and input capacitance is 1055pF at Vds = 30V. The gate threshold voltage is 3V maximum at Id = 250µA, and the recommended drive voltage range is 4.5V to 10V. Maximum gate-source voltage is ±20V.
Thermal characteristics include a maximum power dissipation of 2.1W at ambient temperature and 42W at case temperature. The operating junction temperature range is -55°C to +150°C.
This surface-mount P-channel MOSFET is suitable for power management, load switching, and DC-DC converter applications where high-side switching and low gate drive are required.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.45 | $0.45 |
| 6,000+ | $0.42 | $0.42 |
| 9,000+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDMC5614P-B8 is rated for a maximum drain-source voltage of 60V.
Continuous drain current is 5.7A at ambient temperature (Ta) and 13.5A at case temperature (Tc).
Maximum drain-source on-resistance is 100mΩ at Vgs = 10V and Id = 5.7A.
Maximum gate threshold voltage is 3V at Id = 250µA.
Junction operating temperature range is -55°C to +150°C.
The device is supplied in an 8-PowerWDFN surface-mount package, with a supplier device package of 8-WDFN (3.3mm x 3.3mm).
The existing product data lists it as RoHS3 compliant, but this has not been independently verified.