FDMC510P-F106 FDMC510P-F106 is a P-Channel PowerTrench MOSFET from onsemi. It features a drain-source voltage of -20 V, continuous drain current of -18 A at TC=25°C, and a maximum on-resistance of 8.0 mΩ at VGS=-4.5 V.
Mfr Part #:

FDMC510P-F106

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMC510P-F106 is a P-Channel PowerTrench MOSFET from onsemi. It features a drain-source voltage of -20 V, continuous drain current of -18 A at TC=25°C, and a maximum on-resistance of 8.0 mΩ at VGS=-4.5 V.
✓ Total Stock: 766 pcs
$ Price Range: $0.37 - $1.76

FDMC510P-F106 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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FDMC510P-F106 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC510P-F106 Description

Short technical summary and product information.

The FDMC510P-F106 is a P-Channel MOSFET manufactured by onsemi using the advanced POWERTRENCH process, optimized for low on-resistance, switching performance, and ruggedness. It is designed for applications such as battery management and load switching.

 

Key electrical specifications include a maximum drain-source voltage of -20 V, a gate-source voltage rating of ±8 V, and a continuous drain current of -18 A at TC=25°C (or -12 A at TA=25°C). The device offers a maximum on-resistance of 8.0 mΩ at VGS=-4.5 V and ID=-12 A, with lower gate drive options available: 9.8 mΩ at -2.5 V, 13 mΩ at -1.8 V, and 17 mΩ at -1.5 V. The maximum power dissipation is 41 W at TC=25°C and 2.3 W at TA=25°C.

 

The MOSFET is housed in a surface-mount 8-PowerWDFN package (case 511DH) with a supplier device package of 8-WDFN (3.3x3.3). It is rated for an operating junction temperature range of -55°C to +150°C. The device is 100% UIL tested and has an HBM ESD capability greater than 2 kV typical.

FDMC510P-F106 Quick Information

Product Type: P-Channel MOSFET
Series: FDMC510P
Canonical Name: FDMC510P-F106 P-Channel PowerTrench MOSFET, -20 V, -18 A, 8.0 mΩ, 8-WDFN
Subcategory: Power MOSFET

FDMC510P-F106 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC510P-F106 Estimated Pricing

Qty Low High
1+ $1.76 $1.76
10+ $1.09 $1.09
100+ $0.72 $0.72
500+ $0.56 $0.56
1,000+ $0.51 $0.51
3,000+ $0.44 $0.44
6,000+ $0.39 $0.39
9,000+ $0.37 $0.37
24,000+ $0.37 $0.37

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC510P-F106 Features

  • Max on-resistance 8.0 mΩ at -4.5 V gate drive.
  • Continuous drain current -18 A at case temperature 25°C.
  • Single pulse avalanche energy rated at 37 mJ.
  • Surface mount 8-WDFN 3.3x3.3 mm package.
  • RoHS compliant, Pb-Free, and Halide Free.

FDMC510P-F106 Applications

  • Suitable for battery management circuits.
  • Ideal for load switch applications.
  • Used in power distribution systems.

FDMC510P-F106 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDMC510P-F106?

The maximum drain-source voltage (VDS) is -20 V.

What is the maximum continuous drain current at TC=25°C?

The maximum continuous drain current at TC=25°C is -18 A.

What is the on-resistance at VGS=-4.5 V?

The maximum on-resistance is 8.0 mΩ at VGS=-4.5 V and ID=-12 A.

What package does the FDMC510P-F106 come in?

It comes in a surface mount 8-PowerWDFN package (case 511DH), also specified as 8-WDFN (3.3x3.3).

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDMC510P-F106 RoHS compliant?

Yes, the device is RoHS compliant, Pb-Free, and Halide Free as stated in the datasheet.

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