| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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405,000 pcs
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405000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation | |
| SVHC Present |
The FDMC4435BZ-F127 from ON Semiconductor is a P-Channel MOSFET utilizing the advanced POWERTRENCH process, optimized for minimal on-state resistance. This device is well-suited for power management and load switching tasks, commonly found in notebook computers and portable battery packs.
Key electrical specifications include a maximum drain-source voltage of -30V and a maximum power dissipation of 31W. The drain-source on-resistance is specified as 20mΩ. The operating temperature range spans from -55°C to 150°C.
This MOSFET is packaged in the F127 case with 5 terminals. Its design focuses on efficiency and reliability for demanding power applications. The part number FDMC4435BZ-F127 is associated with ON Semiconductor, a recognized leader in power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage for the FDMC4435BZ-F127 is -30V.
The maximum power dissipation for the FDMC4435BZ-F127 is 31W.
The operating temperature range for the FDMC4435BZ-F127 is -55°C to 150°C.
The on-resistance of the FDMC4435BZ-F127 at 10V gate-source voltage is typically 17mΩ.
The on-resistance of the FDMC4435BZ-F127 at 4.5V gate-source voltage is typically 21.25mΩ.
The typical continuous drain current for the FDMC4435BZ-F127 is -24A.