| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,110 pcs
|
1110 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMC4435BZ-F126 is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor using the PowerTrench process. It is designed for power management and load switching applications. Key electrical specifications include a drain-source breakdown voltage of 30V, continuous drain current of 18A at case temperature 25°C (8.5A at ambient), and a maximum drain-source on-resistance of 20mΩ at Vgs=-10V and Id=-8.5A. The device also features a gate threshold voltage of 3V maximum, gate charge of 46nC, and input capacitance of 2045pF. It is rated for ESD protection above 7kV (HBM). The MOSFET is available in a compact 8-PowerWDFN (8-MLP) surface mount package measuring 3.3x3.3mm, with an exposed pad for thermal management. It is lead-free and RoHS compliant. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 31W at case temperature 25°C. This device is suitable for high-side DC-DC buck converters, notebook battery power management, and load switches.
The drain-source breakdown voltage is 30V.
The device is available in an 8-PowerWDFN (8-MLP) surface mount package, with supplier device package 8-MLP (3.3x3.3mm).
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and lead-free.
The continuous drain current is 18A at case temperature 25°C and 8.5A at ambient temperature 25°C.
The maximum drain-source on-resistance is 20mΩ at Vgs=-10V and Id=-8.5A, and 37mΩ at Vgs=-4.5V and Id=-6.3A.