FDMC3612-L701 The FDMC3612-L701 is an N-Channel Power MOSFET from On Semiconductor with a drain-source voltage of 100V and continuous drain current of 12A at Tc=25°C. It features a low on-resistance of 110mOhm at 10V gate drive.
Mfr Part #:

FDMC3612-L701

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDMC3612-L701 is an N-Channel Power MOSFET from On Semiconductor with a drain-source voltage of 100V and continuous drain current of 12A at Tc=25°C. It features a low on-resistance of 110mOhm at 10V gate drive.
✓ Total Stock: 1,284,000 pcs
$ Price Range: $0.45 - $1.71

FDMC3612-L701 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,284,000 pcs
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FDMC3612-L701 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC3612-L701 Description

Short technical summary and product information.

The FDMC3612-L701 is an N-Channel MOSFET manufactured by On Semiconductor using advanced POWERTRENCH technology. It is designed for applications requiring efficient switching and low on-resistance.

 

Key electrical specifications include a drain-source voltage of 100V, continuous drain current of 12A at case temperature 25°C (3.3A at ambient), and pulsed drain current of 15A. On-resistance is 110mOhm maximum at Vgs=10V, Id=3.3A, and 122mOhm at Vgs=6V, Id=3.0A. Gate threshold voltage is 4V maximum. Gate charge is 21nC at 10V, and input capacitance is 880pF at Vds=50V. Single pulse avalanche energy is 32mJ.

 

Thermal characteristics include power dissipation of 35W at Tc=25°C (2.3W at Ta), operating junction temperature range of -55°C to 150°C, thermal resistance junction-to-case of 3.5°C/W, and junction-to-ambient of 53°C/W. The device is packaged in an 8-PowerWDFN (8-WDFN 3.3x3.3mm) surface mount package with 0.65mm lead pitch.

 

Applications include DC-DC conversion and PSE switch circuits. The device is 100% UIL tested and RoHS compliant.

FDMC3612-L701 Quick Information

Product Type: MOSFET - N-Channel
Series: FDMC3612-L701
Canonical Name: FDMC3612-L701 N-Channel Power MOSFET
Subcategory: N-Channel MOSFET

FDMC3612-L701 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC3612-L701 Estimated Pricing

Qty Low High
1+ $1.71 $1.71
10+ $1.09 $1.09
100+ $0.72 $0.72
500+ $0.59 $0.59
1,000+ $0.49 $0.49
3,000+ $0.45 $0.45

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC3612-L701 Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 12A at case temperature.
  • Low on-resistance of 110mOhm at 10V gate drive.
  • Avalanche energy rated at 32mJ.
  • RoHS compliant and Pb-free.

FDMC3612-L701 Applications

  • Ideal for DC-DC conversion circuits.
  • Used in PSE switch applications.
  • Suitable for power management in portable devices.

FDMC3612-L701 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The FDMC3612-L701 has a maximum drain-source voltage of 100V.

What package does the FDMC3612-L701 come in?

It comes in an 8-PowerWDFN package (8-WDFN 3.3x3.3mm) with 0.65mm lead pitch, surface mount.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FDMC3612-L701 RoHS compliant?

Yes, the device is RoHS3 compliant and Pb-free as per the datasheet.

What is the continuous drain current rating?

The continuous drain current is 12A at case temperature 25°C and 3.3A at ambient temperature 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 110mOhm at Vgs=10V, Id=3.3A, and 122mOhm at Vgs=6V, Id=3.0A.

What is the gate charge?

The maximum gate charge is 21nC at Vgs=10V.

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