| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
231,327 pcs
|
231327 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This is an N-Channel Power MOSFET from On Semiconductor, part of the Dual Cool™ series. It is designed for high-efficiency power conversion applications.
Key electrical specifications include a drain-source voltage (Vdss) of 25V, continuous drain current of 40A at case temperature (Tc) and 24A at ambient temperature (Ta). The drain-source on-resistance is typically 3.5mΩ maximum at 22.5A and 10V gate drive. Gate threshold voltage is 3V maximum at 1mA. Gate charge is 44nC at 10V, and input capacitance is 2705pF at 13V.
The device is surface mounted in an 8-PowerTDFN package with Dual Cool™ 33 supplier package. It supports a wide operating junction temperature range from -55°C to 150°C. Maximum power dissipation is 60W at case temperature and 3W at ambient.
This MOSFET is suitable for applications requiring high efficiency and low conduction losses, such as DC-DC converters, power management, and load switching. The low Rds(on) and fast switching characteristics make it ideal for synchronous rectification and other high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $1.31 | $1.31 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V maximum.
8-PowerTDFN package with Dual Cool™ 33 supplier device package.
-55°C to 150°C junction temperature.
RoHS3 Compliant (unverified).
40A at case temperature, 24A at ambient temperature.
3.5mΩ maximum at 22.5A and 10V gate drive.
3V maximum at 1mA drain current.