FDMC2512SDC FDMC2512SDC is an N-Channel power MOSFET from ON Semiconductor with 25V drain-source voltage and 40A continuous drain current, featuring ultra-low 2mOhm on-resistance at 10V gate drive.
Mfr Part #:

FDMC2512SDC

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDMC2512SDC is an N-Channel power MOSFET from ON Semiconductor with 25V drain-source voltage and 40A continuous drain current, featuring ultra-low 2mOhm on-resistance at 10V gate drive.
✓ Total Stock: 2,600 pcs

FDMC2512SDC Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,600 pcs
2600 pcs On Request 1 On Request On Request On Request On Request On Request

FDMC2512SDC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC2512SDC Description

Short technical summary and product information.

The FDMC2512SDC is an N-Channel enhancement-mode power MOSFET designed for high-efficiency power conversion applications. Manufactured by ON Semiconductor, this device utilizes advanced MOSFET technology to achieve a maximum drain-source voltage of 25V and a continuous drain current of up to 40A at case temperature (Tc) or 32A at ambient temperature (Ta).

 

The MOSFET offers an ultra-low on-resistance of 2mOhm maximum when driven with 10V at 27A, minimizing conduction losses. The gate threshold voltage is 2.5V maximum at 1mA drain current, and the recommended gate drive range is 4.5V to 10V. Input capacitance is 4410pF typical at 13V Vds, and total gate charge is 68nC at 10V.

 

Housed in an 8-PowerTDFN surface mount package with supplier device package 8-PQFN (3.3x3.3 mm), this device is suitable for compact power management designs. Maximum power dissipation is 3W at ambient temperature and 66W at case temperature. Operating junction temperature ranges from -55°C to 150°C.

FDMC2512SDC Quick Information

Product Type: N-Channel Power MOSFET
Series: Dual Cool 33 PowerTrench SyncFET
Canonical Name: FDMC2512SDC N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

FDMC2512SDC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL Level 1
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC2512SDC Features

  • 25V maximum drain-source voltage rating.
  • 40A continuous drain current at Tc.
  • Ultra-low 2mOhm on-resistance at 10V.
  • Surface mount 8-PowerTDFN package.
  • 4.5V to 10V gate drive range.

FDMC2512SDC Applications

  • Suitable for DC-DC converter designs.
  • Low-side switching for power supplies.
  • Battery management and load switching.

FDMC2512SDC FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMC2512SDC?

The maximum drain-source voltage (Vdss) is 25V.

What is the maximum continuous drain current of the FDMC2512SDC?

The maximum drain current is 40A at case temperature (Tc) and 32A at ambient temperature (Ta).

What is the on-resistance of the FDMC2512SDC?

The maximum on-resistance is 2mOhm at a drain current of 27A with a gate voltage of 10V.

What package does the FDMC2512SDC come in?

It is supplied in an 8-PowerTDFN surface mount package (8-PQFN 3.3x3.3mm).

What is the operating temperature range of the FDMC2512SDC?

The junction temperature range is -55°C to 150°C.

Is the FDMC2512SDC RoHS compliant?

The device is reported as RoHS3 compliant and REACH unaffected, but this data is unverified.

Home
Account

Categories