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FDMC0310AS N-Channel Power MOSFET rated for 30V drain-source voltage and 21A continuous drain current. Low on-resistance of 4.4mΩ at 10V gate drive.
Mfr Part #:

FDMC0310AS

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET rated for 30V drain-source voltage and 21A continuous drain current. Low on-resistance of 4.4mΩ at 10V gate drive.
✓ Total Stock: 34,366 pcs

FDMC0310AS Available from 1 distributor

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✓ Non-Authorised
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34,366 pcs
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FDMC0310AS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FDMC0310AS Description

Short technical summary and product information.

The FDMC0310AS is an N-Channel Power MOSFET from onsemi, designed for low-loss power conversion applications. It features a 30V maximum drain-source voltage and a continuous drain current of 21A at 25°C case temperature, or 19A at ambient temperature.

 

This MOSFET utilizes advanced PowerTrench technology and a SyncFET Schottky body diode to achieve low on-resistance: 4.4mΩ maximum at 10V gate drive (19A) and 5.2mΩ maximum at 4.5V gate drive (17.5A). Gate charge is 52nC at 10V, and input capacitance is 3165pF at 15V Vds, enabling efficient switching.

 

The device is packaged in a compact 8-PowerWDFN (8-MLP 3.3x3.3) surface-mount package, suitable for high-density board designs. It is rated for 100A pulsed drain current and 66mJ single-pulse avalanche energy. Operating temperature range is -55°C to 150°C junction temperature.

 

Typical applications include synchronous rectification in DC/DC converters, notebook Vcore/GPU low-side switches, networking point-of-load low-side switches, and telecom secondary-side rectification. The device is Pb-free and RoHS3 compliant, with MSL Level 1 moisture sensitivity.

FDMC0310AS Quick Information

Product Type: Power MOSFET (N-Channel)
Series: SyncFET
Canonical Name: N-Channel Power MOSFET, 30V, 21A, 4.4mΩ, 8-MLP (3.3x3.3)
Subcategory: Single

FDMC0310AS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDMC0310AS Features

  • Low on-resistance of 4.4mΩ at 10V.
  • Rated for 30V drain-source voltage.
  • Continuous drain current up to 21A.
  • Surface mount 8-MLP (3.3x3.3) package.
  • RoHS compliant and Pb-free.

FDMC0310AS Applications

  • Synchronous rectifier for DC/DC converters.
  • Notebook Vcore/GPU low side switch.
  • Networking point of load low side switch.
  • Telecom secondary side rectification.

FDMC0310AS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

30V.

What is the package type?

8-PowerWDFN (8-MLP 3.3x3.3).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDMC0310AS RoHS compliant?

Yes, it is RoHS3 compliant and Pb-free.

What is the typical on-resistance?

Maximum 4.4 mΩ at 10V gate drive, 19A.

What is the maximum gate threshold voltage?

3V at 1mA drain current.

What is the avalanche energy rating?

Single pulse avalanche energy of 66 mJ.

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