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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,000 pcs
|
258000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Avalanche Energy (Maximum) | |
| Configuration | |
| Current | |
| Drain Current (Maximum @ Ta = +25 °C) | |
| Drain Current (Maximum @ Tc=100 °C) | |
| Drain Current (Maximum @ Tc=25 °C) | |
| Drain Current (Maximum) | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-source breakdown voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-to-Source Voltage | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| On-Resistance (Maximum @ ID=15 A, VGS=4.5 V) | |
| On-Resistance (Maximum @ ID=16 A, VGS=10 V) | |
| On-Resistance (Maximum @ ID=9 A, VGS=4.5 V) | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Standard Package Qty | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Thermal Resistance Junction To Case (Maximum) | |
| Thermal Resistance, Junction-to-Ambient (Maximum) | |
| Vgs(th) (Max) @ Id |
The FDMC007N30D is a dual N-channel MOSFET from On Semiconductor, housed in a compact 8-PowerWDFN (Power33) surface-mount package. It integrates two specialized MOSFETs: Q1 (control) and Q2 (synchronous), with the switch node internally connected to simplify layout in synchronous buck converters. The device is designed for optimal power efficiency in point-of-load applications.
Key electrical specifications include a maximum drain-source voltage of 30V for both MOSFETs. Q1 offers a maximum continuous drain current of 29A at TC=25°C and 10A at TA=25°C, with a low on-resistance of 11.6 mΩ at VGS=10V. Q2 provides a higher current capability of 46A at TC=25°C and 16A at TA=25°C, with an even lower on-resistance of 6.4 mΩ at VGS=10V. Both devices feature a maximum gate threshold voltage of 3V and a maximum gate charge of 34nC at VGS=10V.
The MOSFETs are rated for operation over a junction temperature range of -55°C to 150°C. The package offers low thermal resistance, with junction-to-case values of 8.2°C/W for Q1 and 6.1°C/W for Q2, aiding in heat dissipation. The device is RoHS compliant and available in tape and reel packaging with a standard quantity of 3000 units.
Typical applications include mobile computing, mobile internet devices, and general-purpose point-of-load converters, where its dual-MOSFET configuration and low on-resistance contribute to high efficiency and compact design.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.59 | $1.59 |
| 10+ | $1.01 | $1.01 |
| 100+ | $0.67 | $0.67 |
| 500+ | $0.53 | $0.53 |
| 1,000+ | $0.48 | $0.48 |
| 3,000+ | $0.40 | $0.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 30V for both Q1 and Q2.
Q2 can handle a continuous drain current of 46A at TC=25°C.
Q1 has a maximum on-resistance of 11.6 mΩ at VGS=10V and ID=10A.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS compliant.
It is available in an 8-PowerWDFN (Power33) surface-mount package.