FDMC007N08LC N-Channel Power MOSFET from On Semiconductor. 80V drain-source voltage, 66A continuous drain current, 7mOhm maximum on-resistance.
Mfr Part #:

FDMC007N08LC

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET from On Semiconductor. 80V drain-source voltage, 66A continuous drain current, 7mOhm maximum on-resistance.
✓ Total Stock: 1,235 pcs
$ Price Range: $1.28 - $3.21

FDMC007N08LC Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,235 pcs
1235 pcs On Request 1 On Request On Request On Request On Request On Request

FDMC007N08LC Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMC007N08LC Description

Short technical summary and product information.

The FDMC007N08LC is an N-Channel MOSFET manufactured by On Semiconductor using advanced POWERTRENCH Shielded Gate technology. This process minimizes on-state resistance while maintaining superior switching performance with a low soft body diode Qrr.

 

Key electrical specifications include a drain-source voltage rating of 80 V, continuous drain current of 66 A at Tc = 25°C, and a maximum Rds(on) of 7 mOhm at Vgs = 10 V and Id = 21 A. The device supports 5 V gate drive and features a maximum gate threshold voltage of 2.5 V. Gate charge is 41 nC at 10 V, and input capacitance is 2940 pF at 40 V. Power dissipation is rated at 57 W at Tc = 25°C.

 

The MOSFET is housed in an 8-PowerWDFN surface-mount package, also known as 8-PQFN (3.3x3.3 mm) Power33. It operates over a junction temperature range of -55°C to +150°C. The device is RoHS3 compliant and has MSL 1 (unlimited) moisture sensitivity level.

 

Typical applications include primary DC-DC converters, synchronous rectifiers in DC-DC and AC-DC circuits, motor drives, and solar power systems. The part is 100% UIL tested and designed for low switching noise and EMI.

FDMC007N08LC Quick Information

Product Type: MOSFET
Canonical Name: FDMC007N08LC N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDMC007N08LC Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FDMC007N08LC Estimated Pricing

Qty Low High
1+ $3.21 $3.21
10+ $2.09 $2.09
100+ $1.44 $1.44
500+ $1.28 $1.28
3,000+ $1.28 $1.28

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMC007N08LC Features

  • Maximum on-resistance 7mOhm at 10V.
  • 80V drain-source voltage rating.
  • 66A continuous drain current capability.
  • Shielded Gate MOSFET technology.
  • ±20V gate-source voltage rating.

FDMC007N08LC Applications

  • Primary DC-DC MOSFET converter application.
  • Synchronous rectifier in DC-DC and AC-DC.
  • Motor drive circuits.
  • Solar power applications.

FDMC007N08LC FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDMC007N08LC?

The drain-source voltage (Vdss) is 80 V.

What package is the FDMC007N08LC available in?

It is available in an 8-PowerWDFN package, also referred to as 8-PQFN (3.3x3.3 mm) Power33.

What is the operating temperature range of the FDMC007N08LC?

The operating junction temperature range is -55°C to +150°C.

Is the FDMC007N08LC RoHS compliant?

The device is listed as RoHS3 compliant, though this information is unverified from a direct source.

What is the maximum continuous drain current of the FDMC007N08LC?

The continuous drain current is 66 A at Tc = 25°C.

What is the gate charge of the FDMC007N08LC?

The maximum gate charge (Qg) is 41 nC at Vgs = 10 V.

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