| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
2,731 pcs
|
2731 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDMB3900AN is a dual N-Channel MOSFET manufactured by ON Semiconductor, designed for low-voltage power switching applications. It integrates two independent N-Channel MOSFETs in a compact 8-PowerWDFN package, enabling space-efficient designs.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 25V and a continuous drain current rating of 7A. The device offers a low on-resistance of 23 mOhm typically at Vgs = 10V and Id = 7A, ensuring high efficiency in power conversion. It includes a logic-level gate feature allowing direct drive from low-voltage logic circuits.
The MOSFET operates over a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 800mW. The input capacitance is 890 pF at Vds = 13V, and the total gate charge is 17 nC at Vgs = 10V, supporting moderate switching speeds.
| Qty | Low | High |
|---|---|---|
| 2,731+ | $0.26 | $0.26 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25 V.
The maximum continuous drain current is 7 A.
The maximum on-resistance is 23 mOhm at Vgs=10V and Id=7A.
The device is offered in an 8-PowerWDFN surface-mount package, also known as 8-MLP MicroFET (3x1.9mm).
The operating junction temperature range is from -55°C to 150°C.
Yes, it features a logic-level gate, allowing it to be driven by low-voltage logic signals.
The device is listed as RoHS3 Compliant, but this status is unverified.