Mfr Part #:

FDMA8884

N-Channel Power Trench MOSFET, 30V drain-source voltage, 6.5A continuous drain current (Ta), 23mΩ on-resistance at 10V gate drive.

✓ Total Stock: 575,065 pcs

$ Price Range: $0.27 - $1.34

FDMA8884 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	542,065 pcs On Request	542065 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	33,000 pcs On Request	33000 pcs	On Request	1	On Request	On Request	1845+	On Request	On Request

FDMA8884 Description

Short technical summary and product information.

The FDMA8884 is a single N-Channel MOSFET manufactured by ON Semiconductor using the advanced Power Trench process. It is designed for low on-resistance and fast switching performance. Key electrical specifications include a maximum drain-source voltage of 30V, continuous drain current of 6.5A at 25°C ambient (8A at case temperature), and a maximum on-resistance of 23mΩ at VGS=10V and ID=6.5A. The device also features a low gate charge of 7.5nC maximum, enabling efficient switching. The MOSFET is housed in a compact 6-WDFN exposed pad package (MicroFET 2x2) for surface mount assembly. It is RoHS compliant and suitable for applications such as primary switch in power supplies.

FDMA8884 Quick Information

Product Type: N-Channel MOSFET

Series: FDMA8884

Canonical Name: FDMA8884 N-Channel Power Trench MOSFET

Subcategory: Single MOSFET

FDMA8884 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDMA8884 Estimated Pricing

Qty	Low	High
1+	$1.34	$1.34
10+	$0.83	$0.83
100+	$0.54	$0.54
500+	$0.43	$0.43
1,000+	$0.38	$0.38
3,000+	$0.32	$0.32
6,000+	$0.30	$0.30
9,000+	$0.28	$0.28
24,000+	$0.27	$0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMA8884 Features

N-Channel Power Trench MOSFET technology.
Maximum drain-source voltage of 30V.
Continuous drain current up to 8A.
Low on-resistance of 23mΩ at 10V.
Fast switching with low gate charge.

FDMA8884 Applications

Primary switch in DC-DC converters.
Load switching in portable devices.
Power management in battery-powered systems.
Or-ing and reverse polarity protection.

FDMA8884 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the operating voltage of the FDMA8884?

The maximum drain-source voltage (Vdss) is 30V.

What is the package type of the FDMA8884?

It comes in a 6-WDFN exposed pad package (MicroFET 2x2).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDMA8884 RoHS compliant?

Yes, it is RoHS3 compliant per datasheet.

What is the on-resistance of the FDMA8884?

Maximum Rds(on) is 23mΩ at VGS=10V, ID=6.5A, and 30mΩ at VGS=4.5V, ID=6.0A.

What is the gate charge of the FDMA8884?

Maximum total gate charge is 7.5nC at VGS=10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
AEC Qualified	No
Automotive Grade	No
Current	6.5 A (Ta), 8 A (Tc)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Fall Time (Typ)	1.1 ns
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Halogen Free	No
Industrial Grade	Yes
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 15 V
Lead Style	Exposed Pad
Medical Grade	No
Military Grade	No
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.9W (Ta)
Rds On (Max) @ Id, Vgs	23mOhm @ 6.5A, 10V
Rise Time (Typ)	1.1 ns
SVHC Present	Not Present
Supplier Device Package	6-MicroFET (2x2)
Tape & Reel	Yes
Tape Width	8 mm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA