FDMA8878-F130 Single N-Channel Power MOSFET rated for 30V drain-source voltage and up to 10A continuous drain current. Low on-resistance of 16 mOhm at 10V gate drive.
Mfr Part #:

FDMA8878-F130

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
Single N-Channel Power MOSFET rated for 30V drain-source voltage and up to 10A continuous drain current. Low on-resistance of 16 mOhm at 10V gate drive.
✓ Total Stock: 1,337,705 pcs
$ Price Range: $0.48

FDMA8878-F130 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,337,705 pcs
1337705 pcs On Request 1 On Request On Request On Request On Request On Request

FDMA8878-F130 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDMA8878-F130 Description

Short technical summary and product information.

This single N-Channel Power MOSFET uses TRENCH technology to deliver efficient switching in a compact surface mount package. The device is designed for 30V maximum drain-source voltage and supports continuous drain current of up to 10A at case temperature. With a maximum drain-source on-resistance of only 16 mOhm at 9A and 10V gate drive, it minimizes conduction losses.

 

The MOSFET features a gate threshold voltage of up to 3V at 250 µA and a maximum gate-source voltage rating of ±20V. Input capacitance is rated at 720 pF at 15V drain-source bias, while total gate charge is 12 nC at 10V gate drive. Power dissipation is rated at 900 mW at ambient temperature, and the device operates over a junction temperature range from -55°C to 150°C.

 

The part is supplied in a 6-VDFN exposed pad package, also known as 6-MicroFET (2x2), ideal for space-constrained surface mount applications.

FDMA8878-F130 Quick Information

Product Type: Single N-Channel Power MOSFET
Series: Power Trench
Canonical Name: FDMA8878-F130
Subcategory: N-Channel MOSFET

FDMA8878-F130 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDMA8878-F130 Estimated Pricing

Qty Low High
3,000+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDMA8878-F130 Features

  • 30V maximum drain-source voltage rating.
  • 10A continuous drain current at case temperature.
  • 16 mOhm low drain-source on-resistance.
  • 12 nC gate charge for efficient switching.
  • Surface mount 6-MicroFET (2x2) package.

FDMA8878-F130 Applications

  • Used in battery management circuits.
  • Suitable for DC-DC converter designs.
  • Applied in load switching applications.
  • Ideal for power supply output stages.

FDMA8878-F130 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for FDMA8878-F130?

The maximum drain-source voltage is 30 V.

What is the continuous drain current rating?

Up to 10 A at case temperature (Tc) and up to 9 A at ambient temperature (Ta).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is FDMA8878-F130 RoHS compliant?

It is listed as RoHS3 Compliant, though unverified.

What package does FDMA8878-F130 come in?

It comes in a 6-VDFN exposed pad surface mount package (6-MicroFET 2x2).

What is the minimum required gate voltage to turn on this MOSFET?

Maximum gate threshold voltage is 3 V at 250 µA drain current.

What is the drain-source on-resistance at 10V gate drive?

Maximum 16 mOhm at Id = 9 A, Vgs = 10 V.

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