| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
65,745 pcs
|
65745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,145 pcs
|
1145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA86108LZ is a single N-Channel PowerTrench MOSFET from On Semiconductor, designed for high efficiency in synchronous buck converters. It is rated for a drain-source voltage of 100V and a continuous drain current of 2.2A at 25°C. The device offers a maximum drain-source on-resistance of 243mΩ at Vgs=10V and Id=2.2A, and 366mΩ at Vgs=4.5V and Id=1.8A. The gate threshold voltage ranges from 1.0V (minimum) to 3.0V (maximum), with a typical value of 2.2V. The maximum gate-source voltage is ±20V. The device has a maximum power dissipation of 2.4W (Note 1a) and 0.9W (Note 1b) at 25°C ambient. The junction-to-ambient thermal resistance is 52°C/W (Note 1a) and 145°C/W (Note 1b). The operating junction temperature range is -55°C to +150°C. The FDMA86108LZ is packaged in a 6-WDFN exposed pad (6-MicroFET 2x2) for surface mount assembly. It is Pb-Free, RoHS compliant, and free from halogenated compounds and antimony oxides. Typical applications include DC-DC buck converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.84 | $1.84 |
| 10+ | $1.18 | $1.18 |
| 100+ | $0.78 | $0.78 |
| 3,000+ | $0.78 | $0.78 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 100V.
The continuous drain current (Id) is 2.2A at 25°C ambient (Note 1a).
The maximum drain-source on-resistance (Rds(on)) is 243mΩ at Vgs=10V and Id=2.2A.
The operating junction temperature range is -55°C to +150°C.
Yes, the device is RoHS3 compliant and Pb-Free.
The device is packaged in a 6-WDFN exposed pad (6-MicroFET 2x2) for surface mount.
The gate threshold voltage (Vgs(th)) ranges from 1.0V (minimum) to 3.0V (maximum), with a typical value of 2.2V at Id=250µA.