| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,000 pcs
|
13000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,283 pcs
|
2283 pcs | On Request | 1 | On Request | On Request | 1324+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA7670 is an N-Channel PowerTrench MOSFET from ON Semiconductor designed for low-voltage power management applications. It offers a drain-source voltage rating of 30V and continuous drain current of 11A at ambient temperature.
Key electrical characteristics include a maximum on-resistance of 15mOhm at Vgs=10V and Id=11A, gate threshold voltage of 3V at 250µA, and gate charge of 22nC at 10V. Input capacitance is 1360pF at Vds=15V. The device operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a 6-WDFN exposed pad package (6-MicroFET 2x2mm) for surface mount assembly. Maximum power dissipation is 2.4W at ambient temperature. The device is RoHS3 compliant and has MSL level 1 unlimited.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.27 | $0.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
11A at ambient temperature.
15mOhm maximum at Vgs=10V and Id=11A.
-55°C to 150°C (junction).
6-WDFN Exposed Pad (6-MicroFET 2x2mm).
Yes, RoHS3 compliant (unverified).
3V maximum at Id=250µA.