| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
35,699 pcs
|
35699 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
870 pcs
|
870 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
705 pcs
|
705 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA7632 is a single N-Channel PowerTrench MOSFET manufactured by On Semiconductor. It is designed for efficient power management in space-constrained applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 30V, continuous drain current of 9A at ambient temperature, and a maximum drain-source on-resistance of 19mOhm at 9A and 10V gate drive. The device supports gate drive voltages of 4.5V and 10V, with a maximum gate threshold voltage of 3V at 250µA. Gate charge is 13nC at 10V, and input capacitance is 760pF at 15V.
The MOSFET is housed in a compact 6-WDFN exposed pad package (6-MicroFET 2x2mm) for surface-mount assembly. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2.4W at ambient temperature.
The maximum drain-source voltage (Vdss) is 30V.
The continuous drain current is 9A at ambient temperature (Ta).
The FDMA7632 is supplied in a 6-WDFN exposed pad package, also known as 6-MicroFET (2x2mm).
The junction temperature range is -55°C to 150°C.
The FDMA7632 is listed as RoHS3 compliant, though this status is unverified.
The maximum drain-source on-resistance is 19mOhm at Vgs=10V and Id=9A.
The maximum gate charge is 13nC at Vgs=10V.