| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,477 pcs
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4477 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDMA520PZ is a P-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for low-voltage, high-efficiency switching applications. The device is specified with a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 7.3A at 25°C.
Electrical characteristics include a maximum on-resistance (Rds(on)) of 30 mOhm at 7.3A and 4.5V gate drive, a gate threshold voltage (Vgs(th)) of 1.5V maximum, and a gate charge (Qg) of 20 nC. The input capacitance (Ciss) is 1645 pF at 10V Vds. These parameters make it suitable for low-side switching and power management in portable devices.
The device is packaged in a 6-WDFN Exposed Pad surface-mount package, also referred to as a 6-MicroFET (2x2). It supports an operating junction temperature range of -55°C to 150°C and dissipates up to 2.4W at 25°C ambient.
The FDMA520PZ has a maximum drain-source voltage of 20V.
The FDMA520PZ comes in a 6-WDFN Exposed Pad package, also known as 6-MicroFET (2x2).
The junction temperature range is -55°C to 150°C.
The FDMA520PZ is listed as RoHS3 Compliant, though this is unverified.
Maximum gate threshold is 1.5V at 250 µA.
Maximum on-resistance is 30 mOhm at 7.3A and 4.5V gate drive.
Maximum gate charge is 20 nC at 4.5V.